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1N5261D-T

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size123KB,6 Pages
ManufacturerRectron
Download Datasheet Parametric View All

1N5261D-T Overview

Zener Diode

1N5261D-T Parametric

Parameter NameAttribute value
MakerRectron
Reach Compliance Codecompli
ECCN codeEAR99
Diode typeZENER DIODE
Base Number Matches1
1N5221B-
1N5267B
SILICON ZENER DIODES
VOLTAGE 2.4 To 75 Volts POWER 500 mWatts
FEATURES
• Planar Die construction
• 500mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
• In compliance with EU RoHS 2002/95/EC directives
DO-35
MECHANICAL DATA
• Case: Molded Glass DO-35
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Mounting Position: Any
• Ordering information: Suffix : “ -35 ” to order DO-35 Package
• Packing information
B
- 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
P ar am et er
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
O
Sy m b o l
Value
500
175
-65 to +175
Unit s
mW
O
C
P
TO T
T
J
T
S
C
C
O
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at I
F
= 200mA
Symbol
Mi n.
--
--
Typ.
Max.
0.3*
1.1
Uni ts
K/mW
V
R
JA
V
F
--
--
Vali d provi ded that leads at a di stance of 10 mm from case are kept at ambi ent temperature.
2015-09
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