Freescale Semiconductor
Technical Data
Document Number: MRF6V12500H
Rev. 3, 6/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 960 and 1215 MHz. These devices are suitable for use in pulse
applications.
•
Typical Pulse Performance: V
DD
= 50 Volts, I
DQ
= 200 mA,
Pulse Width = 128
μsec,
Duty Cycle = 10%
Application
Narrowband
Broadband
P
out
(W)
500 Peak
500 Peak
f
(MHz)
1030
960--1215
G
ps
(dB)
19.7
18.5
η
D
(%)
62.0
57.0
MRF6V12500HR3
MRF6V12500HSR3
960-
-1215 MHz, 500 W, 50 V
PULSE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak
Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 14.
•
•
•
•
CASE 465-
-06, STYLE 1
NI-
-780
MRF6V12500HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF6V12500HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Impedance, Junction to Case
Case Temperature 80°C, 500 W Pulse, 128
μsec
Pulse Width, 10% Duty Cycle
Symbol
Z
θJC
Value
(2,3)
0.044
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2009--2010, 2012. All rights reserved.
MRF6V12500HR3 MRF6V12500HSR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2, passes 2600 V
B, passes 200 V
IV, passes 2000 V
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 200 mA)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 90 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 1.32 mA)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 200 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.26 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.2
697
1391
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
0.9
1.7
—
1.7
2.4
0.25
2.4
3.2
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
110
—
—
—
—
—
—
10
—
20
200
μAdc
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Narrowband Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 200 mA, P
out
= 500 W Peak (50 W Avg.),
f = 1030 MHz, 128
μsec
Pulse Width, 10% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
IRL
18.5
58.0
—
19.7
62.0
--18
22.0
—
--9
dB
%
dB
Typical Broadband Performance — 960-
-1215 MHz
(In Freescale 960--1215 MHz Test Fixture, 50 ohm system) V
DD
= 50 Vdc,
I
DQ
= 200 mA, P
out
= 500 W Peak (50 W Avg.), f = 960--1215 MHz, 128
μsec
Pulse Width, 10% Duty Cycle
Power Gain
Drain Efficiency
1. Part internally matched both on input and output.
G
ps
η
D
—
—
18.5
57.0
—
—
dB
%
MRF6V12500HR3 MRF6V12500HSR3
2
RF Device Data
Freescale Semiconductor, Inc.
V
BIAS
R3
R1
C5
C9
C8
C7
C3
Z19
Z9
Z10
Z11
Z12
Z13
Z14
C12
C13
+
C14
+
C15
V
SUPPLY
RF
INPUT
Z15
Z16
Z17
C2
Z18
RF
OUTPUT
Z1
C1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
DUT
Z20
Z21
R4
R2
C6
C4
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19, Z21
PCB
C16
C11
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9, Z20
Z10
C10
0.457″ x 0.080″ Microstrip
0.250″ x 0.080″ Microstrip
0.605″ x 0.040″ Microstrip
0.080″ x 0.449″ Microstrip
0.374″ x 0.608″ Microstrip
0.118″ x 1.252″ Microstrip
0.778″ x 1.710″ Microstrip
0.095″ x 1.710″ Microstrip
0.482″ x 0.050″ Microstrip
0.138″ x 1.500″ Microstrip
0.161” x 1.500″ Microstrip
0.613” x 1.281″ Microstrip
0.248” x 0.865″ Microstrip
0.087” x 0.425″ Microstrip
0.309” x 0.090″ Microstrip
0.193” x 0.516″ Microstrip
0.279” x 0.080″ Microstrip
0.731” x 0.080″ Microstrip
0.507” x 0.040″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6V12500HR3(HSR3) Test Circuit Schematic
Table 5. MRF6V12500HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C2
C3, C4, C5, C6
C7, C10
C8, C11, C13, C16
C9
C12
C14, C15
R1, R2
R3, R4
Description
5.1 pF Chip Capacitors
33 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
2.2
μF,
100 V Chip Capacitors
22
μF,
25 V Chip Capacitor
1
μF,
100 V Chip Capacitor
470
μF,
63 V Electrolytic Capacitors
56
Ω,
1/4 W Chip Resistors
0
Ω,
3 A Chip Resistors
Part Number
ATC100B5R1CT500XT
ATC100B330JT500XT
GRM55DR61H106KA88L
2225X7R225KT3AB
TPSD226M025R0200
GRM31CR72A105KA01L
MCGPR63V477M13X26--RH
CRCW120656R0FKEA
CRCW12060000Z0EA
Manufacturer
ATC
ATC
Murata
ATC
AVX
Murata
Multicomp
Vishay
Vishay
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C14
R3
MRF6V12500H
Rev. 1
C9
C12
C8
C7
R1
C3
C5
C13
C15
CUT OUT AREA
C1
C2
R2
C11 C10
R4
C4
C6
C16
Figure 2. MRF6V12500HR3(HSR3) Test Circuit Component Layout
MRF6V12500HR3 MRF6V12500HSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
10000
1000
C, CAPACITANCE (pF)
100
10
1
C
rss
0.1
0
10
20
30
40
50
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
MAXIMUM OPERATING T
case
(°C)
C
iss
C
oss
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
160
140
120
100
80
60
40
20
0
0
5
10
15
20
25
DUTY CYCLE (%)
V
DD
= 50 Vdc, I
DQ
= 200 mA
f = 1030 MHz, Pulse Width = 128
μsec
P
out
= 525 W
P
out
= 500 W
P
out
= 475 W
Figure 3. Capacitance versus Drain-
-Source Voltage
22
21
G
ps
, POWER GAIN (dB)
20
19
18
17
16
15
14
30
V
DD
= 50 Vdc, I
DQ
= 200 mA, f = 1030 MHz
Pulse Width = 128
μsec,
Duty Cycle = 10%
100
P
out
, OUTPUT POWER (WATTS) PEAK
η
D
G
ps
80
70
60
50
40
30
20
10
0
1000
P
out
, OUTPUT POWER (WATTS)
η
D,
DRAIN EFFICIENCY (%)
Figure 4. Safe Operating Area
62
P3dB = 57.6 dBm (575 W)
61
Ideal
60
59 P1dB = 57.1 dBm (511 W)
58
57
Actual
56
55
54
53
52
51
V
DD
= 50 Vdc, I
DQ
= 200 mA, f = 1030 MHz
Pulse Width = 128
μsec,
Duty Cycle = 10%
50
49
32
34
36
38
40
42
30
P
in
, INPUT POWER (dBm) PEAK
Figure 5. Power Gain and Drain Efficiency
versus Output Power
22
21
G
ps
, POWER GAIN (dB)
20
19
18
17
30
400 mA
200 mA
600 mA
I
DQ
= 800 mA
G
ps
, POWER GAIN (dB)
22
21
20
19
18
17
16
15
14
V
DD
= 50 Vdc, f = 1030 MHz
Pulse Width = 128
μsec,
Duty Cycle = 10%
100
P
out
, OUTPUT POWER (WATTS) PEAK
1000
13
12
30
Figure 6. Output Power versus Input Power
I
DQ
= 200 mA, f = 1030 MHz
Pulse Width = 128
μsec
Duty Cycle = 10%
35 V
50 V
45 V
40 V
V
DD
= 30 V
100
1000
P
out
, OUTPUT POWER (WATTS) PEAK
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain versus Output Power
MRF6V12500HR3 MRF6V12500HSR3
RF Device Data
Freescale Semiconductor, Inc.
5
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