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ZXMS66004DGTA

Description
60V N-channel self protected enhancement mode Intellifet MOSFET
File Size461KB,10 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Compare View All

ZXMS66004DGTA Overview

60V N-channel self protected enhancement mode Intellifet MOSFET

A Product Line of
Diodes Incorporated
ZXMS6004DG
60V N-channel self protected enhancement mode
Intellifet MOSFET
Summary
Continuous drain source voltage
On-state resistance
Nominal load current (V
IN
= 5V)
Clamping energy
60 V
500 mΩ
1.3 A
490mJ
Description
The ZXMS6004DG is a self protected low side MOSFET with logic level
input. It integrates over-temperature, over-current, over-voltage (active
clamp) and ESD protected logic level functionality. The ZXMS6004DG is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard MOSFETs are
not rugged enough.
Features
Compact high power dissipation package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input Protection (ESD)
High continuous current rating
S
D
D
IN
Top view
Ordering information
Device
Part mark
Reel size
(inches)
7
Tape width
(mm)
12 embossed
Quantity per reel
ZXMS66004DGTA
ZXMS
6004D
3,000 units
Issue 1 - December 2008
© Diodes Incorporated, 2008
1
www.zetex.com
www.diodes.com

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ZXMS66004DGTA ZXMS6004DG
Description 60V N-channel self protected enhancement mode Intellifet MOSFET 60V N-channel self protected enhancement mode Intellifet MOSFET
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