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MA4P274

Description
50 V, SILICON, PIN DIODE
CategoryDiscrete semiconductor    diode   
File Size241KB,10 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric View All

MA4P274 Overview

50 V, SILICON, PIN DIODE

MA4P274 Parametric

Parameter NameAttribute value
MakerMACOM
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage100 V
Nominal diode capacitance0.35 pF
Maximum diode forward resistance3 Ω
Diode resistance test current10 mA
Diode resistance test frequency100 MHz
Diode typePIN DIODE
Minority carrier nominal lifetime1 µs
Reverse test voltage50 V
surface mountYES
AN3021
PIN Diodes for Microwave Switch Designs
Introduction
This Application Note is intended to provide practical guidance in the selection of PIN Diodes for switch control
circuit functions. Switches, Digital and Analog Attenuators, and Limiters each have unique functions that require
proper device selection. The design difficulty lies within the parametric translation from Diode Specifications, to
the circuit designers’ Microwave Specifications. Diode parametric language such as Vb, Vf, Ct, Rs,
τ
L
,
θ,
must
convert into Insertion Loss, VSWR, Isolation, P1dB, Input IP3, RF Operating Power, RF Power Dissipation, and
D.C. Power Consumption Specification Terminology.
In addition to actual diode parameters, package parasitics play a significant role in determining switch circuit per-
formance. Package capacitance, package inductance, package electrical resistance, and package thermal im-
pedance are extremely important considerations to determine the effective frequency bandwidth and maximum
incident power for reliable switch operation.
The manufacturing methodology dictates the type of diode selection. Surface mount assembly will mandate the
usage of either plastic, HMIC SURMOUNT, or MELF & HiPAX ceramic devices. Chip and Wire ( Hybrid ) manu-
facturing will determine the usage of Cermachips, Flip Chips, or Beam Lead Devices. Schematics for the most
common switch designs: Series-Exclusive, Shunt-Exclusive, and Series-Shunt are outlined below for considera-
tion.
Rev. V2
The Decision Making Process for PIN Diode Selection for Microwave Switch Design
The following procedure outlines and Effective Process for PIN Diode Selection for Switch Design.
1. Determine the Preferred Type of Manufacturing for the PIN Diode in the Switch Design: Surface
Mount or Chip and Wire (Hybrid) Manufacturing.
2. Determine the Frequency of Operation and RF Power Handling of the Switch Design.
3. Use Table 1, “Relative Switch Performance and Design Evaluation Matrix” to determine the Type of
Switch Design that Best Satisfies the Particular Switch Specifications and Requirements.
4. Use Table 2, “Relative PIN Diode Performance Evaluation Matrix” to Determine the Type of PIN Di-
ode that Best Satisfies the Switch Design Selected from Table 1.
5. Use Table 3, “PIN Diode P/N Series Matrix” to Determine the PIN Diode P/N Series that Best Satis-
fies the Type of PIN Diode Selected from Table 2.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
India
Tel: +91.80.43537383
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

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