DL5817 THRU DL5819
SURFACE MOUNT
SCHOTTKY BARRIER RECTI FI ERS
V O L T AG E R ANG E : 2 0 - - - 4 0 V CURRENT: 1.0 A
FEATURES
DO-213AB
SOLDERABLE ENDS
D2=D1
＋
0
－
0.20
D1
2.6± 0.15
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
D2
0.5± 0.1
4.9± 0.2
0.5± 0.1
MECHANICAL DATA
Case:JEDEC DO--213AB,molded plastic
Terminals:
Solderable
per
MIL- STD-202,method 208
Polarity: Color band denotes cathode
Weight: 0.0046 ounces,0.116 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
MDD Catalog Number
DL5817
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
DL5818
30
21
30
1.0
DL5819
40
28
40
UNITS
V
V
V
A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
A
=90
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage @ 1.0A
z
(Note 1)
@ 3.0A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note2)
(Note3)
I
FSM
0.45
0.75
25
A
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
0.55
0.875
1.0
10.0
110
80
- 55 ---- + 150
- 55 ---- + 150
0.60
0.90
V
mA
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test : 300
s pulse width,1% duty cy cle.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient,vertical
PC board mounting,0.5"(12.7mm)lead length.
RATINGS AND CHARACTERISTIC CURVES
DL5817 THRU DL5819
FIG.1 -- FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.2 -- PEAK FORWARD SURGE CURRENT
1.0
30
25
20
25
10
5
0
1
10
100
T
J
=T
J
MAX
8.3ms Single Half
Sine-Wave
0.75
AMPERES
0.5
0.25
Resistive or
Inductive Load
0.375"(9.5mm)Lead
Length
0
0
25
50
75
100
125
150
AMBIENT
TEMPERATURE,
NUMBER OF CYCLES AT 60Hz
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
X -CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
20
400
CAPACITANCE, pF
10
DL 5817
DL
5819
T
J
=25℃
f=1.0MHz
Vsig=50mVp-p
AMPERES
100
1
DL 5818
T
J
= 25
P ulse w id th= 300
1 % D uty C yc le
s
10
0.1
1
10
100
.1
.2
.3
.4
.5
.6
.7
.8
.9
1.0
1.1
1.2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
REVERSE VOLTAGE,VOLTS
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
FPGA/CPLD
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