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ES3G

Description
3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size539KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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ES3G Overview

3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB

ES3G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGREEN, PLASTIC, SMC, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingPURE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.0350 us
Maximum repetitive peak reverse voltage400 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current100 A
ES3A THRU ES3J
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage - 50 to 600 Volts
DO-214AA/SMB
Forward Current - 3.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
Glass passivated chip junction
0.087 (2.20)
0.071 (1.80)
0.155(3.94)
0.130(3.30)
0.180(4.57)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.084(2.13)
MECHANICAL DATA
0.008(0.203)MAX.
0.060(1.52)
0.030(0.76)
0.220(5.59)
0.205(5.21)
Case:
JEDEC DO-214AA molded plastic body
Terminals:
leads solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight
:0.003 ounce, 0.093 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
ES3A ES3B ES3C
ES3D ES3E
ES3G
ES3J
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
3.0
300
210
300
400
280
400
600
420
600
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
,
T
STG
0.95
100.0
1.25
5.0
100.0
35
45.0
47.0
-50 to +150
1.7
Amps
Volts
µ
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

ES3G Related Products

ES3G ES3A ES3B ES3C ES3D ES3E ES3J
Description 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-214AB MULTICOMP - ES3J - DIODE; ULTRA-FAST; 3A; 600V
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE - -
Diode type rectifier diode rectifier diode RECTIFIER DIODE rectifier diode rectifier diode - -

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