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HFM101-M

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size540KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
Download Datasheet Parametric Compare View All

HFM101-M Overview

SIGNAL DIODE

HFM101-M Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSIGNAL DIODE
HFM101-M THRU HFM107-M
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
SOD-123FL
Cathode Band
Top View
FEATURES
Glass passivated device
Ideal for surface mouted applications
Low reverse leakage
Metallurgically bonded construction
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
2.8
±
0.1
1.1± 0.15
0.10-0.30
0.6
±
0.25
1.0±
0.2
1.8± 0.1
MECHANICAL DATA
Case:
JEDEC SOD-123FL molded plastic body over passivated chip
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.0007
ounce, 0.02 grams
3.7
±
0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time (NOTE 1)
SYMBOLS
HFM101-M HFM102-M HFM103-M HFM104-M HFM105-M HFM106-M HFM107-M
UNITS
VOLTS
VOLTS
VOLTS
Amp
U1A
U1B
U1D
U1G
U1J
U1K
U1M
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
trr
50
1.0
25.0
1.3
5.0
100.0
75
180
-50 to +150
1.7
Amps
Volts
µ
A
ns
°C/W
C
Typical thermal resistance
R
θ
JA
Operating junction and storage temperature range T
J
,
T
STG
Note:
1.Measured with IF=0.5A, IR=1A, Irr=0.25A.

HFM101-M Related Products

HFM101-M HFM102-M HFM103-M HFM104-M HFM105-M HFM106-M HFM107-M
Description SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
Diode type SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE

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