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MUR160

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size496KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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MUR160 Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

MUR160 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
stateTRANSFERRED
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
terminal coatingTIN LEAD
Terminal locationAXIAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0600 us
Maximum repetitive peak reverse voltage600 V
Maximum average forward current1 A
MUR120 THRU MUR160
ULTRA FAST RECTIFIERS
Reverse Voltage - 200 to 600 Volts
Forward Current - 1.0 Amperes
DO-15
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ultra fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.140(3.6)
0.104(2.6)
DIA.
0.300(7.6)
0.230(5.8)
MECHANICAL DATA
1.0 (25.4)
MIN.
0.034(0.86)
0.028(0.70)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-15 molded plastic body over passivated chip
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.014
ounce, 0.40 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=150 C
Maximum reverse recovery time
(NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS
MUR120
MUR140
MUR160
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
200
140
200
400
280
400
1.0
600
420
600
I
FSM
V
F
I
R
t
rr
R
θ
JA
T
J
,
T
STG
0.875
2.0
50.0
25
27.0
35
1.25
5.0
150.0
50
50.0
-65 to +175
Amps
Volts
µ
A
ns
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

MUR160 Related Products

MUR160 MUR120 MUR140
Description 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 SILICON, RECTIFIER DIODE, DO-41
Number of terminals 2 2 -
Number of components 1 1 -
Processing package description PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 -
state TRANSFERRED TRANSFERRED -
packaging shape ROUND round -
Package Size LONG FORM LONG FORM -
Terminal form WIRE Wire -
terminal coating TIN LEAD tin lead -
Terminal location AXIAL AXIAL -
Packaging Materials PLASTIC/EPOXY Plastic/Epoxy -
structure SINGLE single -
Shell connection ISOLATED isolation -
Diode component materials SILICON silicon -
Diode type SIGNAL DIODE Signal diode -
Maximum reverse recovery time 0.0600 us 0.0300 us -
Maximum repetitive peak reverse voltage 600 V 200 V -
Maximum average forward current 1 A 1 A -

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