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SB390

Description
3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size580KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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SB390 Overview

3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD

SB320 THRU SB3200
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts
DO-201AD
Forward Current - 3.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.220(5.6)
0.197(5.0)
DIA.
0.375 (9.50)
0.285(7.20)
1.0 (25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
MECHANICAL DATA
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.04
ounce, 1.10 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
SB SB SB SB SB SB
320 330 340 350 360 370
SB SB SB SB SB
380 390 3B0 3150 3200
UNITS
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
70
49
70
3.0
80
56
80
90 100 150 200 VOLTS
63 70 105 140 VOLTS
90 100 150 200 VOLTS
Amps
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
250
0.55
20.0
0.70
80.0
0.85
0.5
10.0
160
40.0
-65 to +125
-65 to +150
-65 to +150
Amps
0.95 Volts
0.2
2.0
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
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