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FR606G

Description
6 A, 800 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size70KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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FR606G Overview

6 A, 800 V, SILICON, RECTIFIER DIODE

FR601G THRU FR607G
FAST RECOVERY GLASS PASSIVATED RECTIFIERS
Reverse Voltage - 50 to 1000 Volts
Forward Current - 6.0 Amperes
R-6
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.360(9.1)
0.340(8.6)
DIA.
0.360(9.1)
0.340(8.6)
MECHANICAL DATA
1.0 (25.4)
MIN.
0.052(1.3)
0.048(1.2)
DIA.
Dimensions in inches and (millimeters)
Case:
R-6 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.072
ounce, 2.05 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 6.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
FR
601G
FR
602G
FR
FR
603G 604G
FR
605G
FR
606G
FR
607G
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
6.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
,
T
STG
150
300.0
1.3
10.0
200.0
250
150.0
10.0
-65 to +150
500
Amps
Volts
µ
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
MDD ELECTRONIC

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