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HER608

Description
6 A, 1000 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size533KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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HER608 Overview

6 A, 1000 V, SILICON, RECTIFIER DIODE

HER601 THRU HER608
HIGH EFFICIENCY RECTIFIERS
Reverse Voltage - 50 to 1000 Volts
R-6
Forward Current -6.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
High speed switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.360 (9.1)
0.340(8.6)
DIA.
0.360(9.1)
0.340(8.6)
MECHANICAL DATA
1.0 (25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
Case:
R-6 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.072
ounce, 2.05 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=50 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 6.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
HER
601
HER
602
HER
603
HER HER
604 605
HER
606
HER
607
HER
608
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200 300
140 210
200 300
400
280
400
600
420
600
800
560
800
1000
700
1000
6.0
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
,
T
STG
50
100.0
1.0
200.0
1.3
10.0
200.0
70
65.0
10.0
-50 to +150
1.70
Amps
Volts
µ
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

HER608 Related Products

HER608 HER601 HER602 HER603 HER604 HER605 HER606 HER607
Description 6 A, 1000 V, SILICON, RECTIFIER DIODE 6 A, 50 V, SILICON, RECTIFIER DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE 6 A, SILICON, RECTIFIER DIODE 6 A, SILICON, RECTIFIER DIODE 6 A, SILICON, RECTIFIER DIODE 6 A, SILICON, RECTIFIER DIODE 6 A, SILICON, RECTIFIER DIODE

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