Cree
®
EZ600-n™ Gen 2 LED
Data Sheet (Cathode-up)
CxxxEZ600-Sxx000-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs.
The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the eutectic method. These
vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are
tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications,
such as general illumination, automotive lighting and LCD backlighting.
FEATURES
•
EZBright Power Chip LED RF Performance
–
–
•
•
•
•
•
450 & 460 nm - 200 mW min.
527 nm - 60 mW min.
APPLICATIONS
•
General Illumination
–
–
–
–
–
•
•
•
Automobile
Aircraft
Decorative Lighting
Task Lighting
Outdoor Illumination
Lambertian Radiation
Conductive Epoxy, Solder Paste or Preforms, or
Flux Eutectic Attach
Low Forward Voltage – 3.5 V Typical at 350 mA
Single Wire Bond Structure
Maximum DC Forward Current - 400 mA
White LEDs
Crosswalk Signals
Backlighting
•
Dielectric Passivation Across Epi Surface
CxxxEZ600-Sxx000-2 Chip Diagram
Top View
EZBright LED Chip
580 x 580 μm
2
Backside
Metallization
Gold Bond Pad
130 x 130 μm
2
Dielectric Passivation
Bottom View
Die Cross Section
A
CPR3EE Rev
Data Sheet:
Cathode (-)
t = 170 μm
Anode (+);
3 μm AuSn
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Note 1
DC Forward Current
Peak Forward Current
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 350 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450EZ600-Sxx00-2
C460EZ600-Sxx00-2
C527EZ600-Sxx00-2
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Area (μm)
Chip Thickness (μm)
Top Au Bond Pad (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
Back Contact Metal Thickness (μm)
3.1
3.1
3.1
Typ.
3.5
3.5
3.5
Max.
4.1
4.1
4.1
Note 2
CxxxEZ600-Sxx000-2
400 mA
600 mA
Note 3
145°C
5 V
-40°C to +100°C
-40°C to +120°C
Reverse Current
[I(Vr=5 V), μA]
Max.
2
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
35
CxxxEZ600-Sxx000-2
Dimension
550 x 550
580 x 580
170
130 x 130
3.0
580 x 580
3.0
Tolerance
±40
±40
±25
±15
±1.0
±40
±1.0
Notes:
1. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree
EZBright Applications Note for assembly-process information.
2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values
given are within the range of average expected by the manufacturer in large quantities and are provided for information only.
All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an
integrating sphere using Illuminance E.
3. This peak forward current specification is based on a 400 ms pulse width at a 1/5-duty cycle with a junction temperature of 65°C.
4. Specifications are subject to change without notice.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ600-n are trademarks of Cree, Inc.
2
CPR3EE Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
Standard Bins for CxxxEZ600-Sxx000-2
LED chips are sorted to the
radiant flux
and
dominant wavelength
bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxEZ600-Sxx000-2) orders may be filled with any or all bins (CxxxEZ600-0xxx-2)
contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 350 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
Radiant Flux (mW)
C450EZ600-S20000-2
C450EZ600-0209-2
C450EZ600-0210-2
C450EZ600-0206-2
C450EZ600-0202-2
C450EZ600-0211-2
C450EZ600-0207-2
C450EZ600-0203-2
C450EZ600-0212-2
C450EZ600-0208-2
C450EZ600-0204-2
280
C450EZ600-0205-2
240
C450EZ600-0201-2
200
445
447.5
450
Dominant Wavelength (nm)
452.5
455
Radiant Flux (mW)
C460EZ600-S20000-2
C460EZ600-0209-2
C460EZ600-0210-2
C460EZ600-0206-2
C460EZ600-0202-2
C460EZ600-0211-2
C460EZ600-0207-2
C460EZ600-0203-2
C460EZ600-0212-2
C460EZ600-0208-2
C460EZ600-0204-2
280
C460EZ600-0205-2
240
C460EZ600-0201-2
200
455
457.5
460
Dominant Wavelength (nm)
462.5
465
C527EZ600-S06000-2
C527EZ600-0017-2
C527EZ600-0018-2
C527EZ600-0015-2
C527EZ600-0012-2
C527EZ600-0009-2
C527EZ600-0006-2
C527EZ600-0019-2
C527EZ600-0016-2
C527EZ600-0013-2
C527EZ600-0010-2
C527EZ600-0007-2
Radiant Flux (mW)
140
C527EZ600-0014-2
120
100
80
60
520
C527EZ600-0011-2
C527EZ600-0008-2
C527EZ600-0005-2
525
530
535
Dominant Wavelength (nm)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ600-n are trademarks of Cree, Inc.
3
CPR3EE Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
Dominant Wavelength S
4
3
2
1
0
-1
-2
25
50
75
100
125
150
Characteristic Curves
These are representative measurements for the EZ600 LED product. Actual curves will
Temperature (°C)
for the various
Junction
vary slightly
radiant flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
400
110%
105%
100%
Relative Light Intensity Vs Junction Temperature
300
250
Relative Light Intensity
350
95%
90%
85%
80%
75%
70%
65%
If (mA)
200
150
100
50
0
0
1
2
3
4
5
25
50
75
100
125
150
Vf (V)
Junction Temperature (°C)
Relative Intensity vs. Forward Current
Dominant Wavelength Shift (nm)
125%
125%
100%
100%
75%
75%
50%
50%
Dominant Wavelength Shift Vs Junction Temperature
6
5
4
Relative Intensity
Relative Intensity
3
2
1
0
-1
-2
25
50
75
100
125
150
25%
25%
0%
0%
0
0
50
50
100
100
150
150
200
200
250
250
300
300
350
350
400
400
If (mA)
Junction Temperature (°C)
Wavelength Shift vs. Forward Current
20
20
16
16
110%
0.100
Relative Light
Shift Vs Junction Temperature
Voltage
Intensity Vs Junction Temperature
Voltage Shift (V)
Relative Light Intensity
105%
0.000
100%
DW Shift (nm)
DW Shift (nm)
12
12
8
8
4
4
-0.100
95%
90%
-0.200
85%
-0.300
80%
-0.400
75%
70%
-0.500
65%
-0.600
0
0
-4
-4
-8
-8
0
0
50
50
100
100
150
150
200
200
250
250
300
300
350
350
400
400
25
25
50
50
75
75
100
100
125
125
150
150
If (mA)
Junction Temperature (°C)
Junction Temperature (°C)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ600-n are trademarks of Cree, Inc.
4
CPR3EE Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for
each chip.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and EZBright, EZ, and EZ600-n are trademarks of Cree, Inc.
5
CPR3EE Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
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