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1SV288

Description
45 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size37KB,1 Pages
ManufacturerZHAOXINGWEI
Websitehttp://www.alldatasheet.com
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1SV288 Overview

45 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE

SMD Type
Silicon Epitaxial Planar Diode
1SV288
Diodes
SOD-323
+0.1
1.7
-0.1
Unit: mm
+0.05
0.3
-0.05
+0.05
0.85
-0.05
Features
High Capacitance Ratio:C2V/C25V = 16(Typ.)
Low Series Resistance:rs = 0.92
(Typ.)
0.475
0.375
+0.1
2.6
-0.1
1.0max
Excellent C-V Characteristics,and Small Tracking Error.
Useful for small size Tuner.
Absolute Maxim um Ratings Ta = 25
Param eter
Reverse Voltage
Peak Reverse Voltage
Junction Tem perature
Storage Tem perature Range
Sym bol
V
R
V
RM
T
j
T
stg
Value
30
35(R
L
= 10 K
125
-55 to +125
)
Unit
V
V
Electrical C haracteristics T a = 25
P aram eter
Reverse V oltage
Reverse Current
Capacitance
Capacitance Ratio
S eries Resistance
Note :
A vailable in m atched group for capacitance to 2.5% .
C(M ax.)-C(M in.)
C(M in.)
(V
R
=2~25V )
0.025
S ym bol
V
R
I
R
C
2V
C
25V
C
2V
/C
25V
r
s
V
R
= 5V , f = 470 M Hz
Conditions
I
R
= 1
A
M in
30
10
41
2.5
15
16
0.92
1.05
49.5
3.2
Typ
M ax
Unit
V
nA
pF
V
R
= 28 V
f = 1 M Hz;V
R
= 2 V
f = 1 M Hz;V
R
= 25 V
Marking
Marking
TJ
+0.05
0.1
-0.02
+0.1
1.3
-0.1

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