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1N4007-BP

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size217KB,4 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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1N4007-BP Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

1N4007-BP Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingMATTE Tin
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time2 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current1 A
MCC
Micro Commercial Components
TM
Micro Commercial Components
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
1N4001
THRU
1N4007
Features
Low Current Leakage
and Low Cost
Lead Free Finish/RoHS Compliant (Note1)
("P"Suffix designates
Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
1 Amp Rectifier
50 - 1000 Volts
DO-41
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Typical Thermal Resistance:
35
°C/W
Junction to
Case
25°C/W
Junction to
Lead at 0.375"
Lead Length P.C.B. Mounted
MCC
Device
Maximum
Maximum Maximum
Catalog
Marking
Recurrent
RMS
DC
Number
Peak
Voltage
Blocking
Reverse
Voltage
Voltage
1N4001
50V
35V
50V
1N4001
1N4002
1N4002
100V
70V
100V
1N4003
1N4003
200V
140V
200V
1N4004
1N4004
400V
280V
400V
1N4005
1N4005
600V
420V
600V
1N4006
1N4006
800V
560V
800V
1N4007
1N4007
1000V
700V
1000V
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Maximum Reverse
Recovery Time
Rating for fusing
I
F(AV)
I
FSM
V
F
I
R
1.0A
30A
T
A
= 75°C
8.3ms, half sine
I
FM
= 1.0A;
T
J
= 25°C*
T
J
= 25°C
T
J
= 125°C
Measured at
1.0MHz, V
R
=4.0V
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
t<8.3ms
INCHES
MIN
.166
.080
.028
1.000
D
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
C
1.0V
5.0µA
50µA
15pF
2.0us
3.7A
2
s
DIMENSIONS
MM
MIN
4.10
2.00
.70
25.40
C
J
T
rr
I
2
t
DIM
A
B
C
D
MAX
.205
.107
.034
---
MAX
5.20
2.70
.90
---
NOTE
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
Note:
1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
www.mccsemi.com
Revision:
D
1 of 4
2012/07/09

1N4007-BP Related Products

1N4007-BP 1N4003-TP
Description 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
Number of terminals 2 2
Number of components 1 1
Processing package description ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape round ROUND
Package Size LONG FORM LONG FORM
Terminal form Wire WIRE
terminal coating MATTE Tin MATTE TIN
Terminal location AXIAL AXIAL
Packaging Materials Plastic/Epoxy PLASTIC/EPOXY
structure single SINGLE
Shell connection isolation ISOLATED
Diode component materials silicon SILICON
Diode type Signal diode SIGNAL DIODE
Maximum reverse recovery time 2 us 2 us
Maximum repetitive peak reverse voltage 1000 V 200 V
Maximum average forward current 1 A 1 A

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