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1N4003

Description
1 A, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size79KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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1N4003 Overview

1 A, SILICON, SIGNAL DIODE, DO-41

1N4003 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instructionPLASTIC PACKAGE-2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N4001 thru 1N4007
Vishay General Semiconductor
General Purpose Plastic Rectifier
FEATURES
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-204AL (DO-41)
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
(8.3 ms sine-wave)
I
FSM
(square wave t
p
= 1 ms)
V
F
I
R
T
J
max.
1.0 A
50 V to 1000 V
30 A
45 A
1.1 V
5.0 μA
150 °C
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 75 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Non-repetitive peak forward
surge current square waveform
T
A
= 25 °C (fig. 3)
t
p
= 1 ms
t
p
= 2 ms
t
p
= 5 ms
I
R(AV)
I
2
t
(1)
T
J
, T
STG
I
FSM
SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
45
35
30
30
3.7
- 50 to + 150
μA
A
2
s
°C
A
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
Maximum full load reverse current, full cycle
average 0.375" (9.5 mm) lead length T
L
= 75 °C
Rating for fusing (t < 8.3 ms)
Operating junction and
storage temperature range
Note
(1)
For device using on bridge rectifier appliaction
Document Number: 88503
Revision: 23-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

1N4003 Related Products

1N4003 1N4007 1N4004 1N4006 1N4002 1N4001 1N4005
Description 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 O-PALF-W2 O-PALF-W2 PLASTIC PACKAGE-2
Reach Compliance Code unknow unknown unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JEDEC-95 code DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A 30 A 30 A
Number of components 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 150 °C 175 °C 175 °C 175 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 225 225 NOT SPECIFIED 225 225
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 1000 V 400 V 800 V 100 V 50 V 600 V
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker Vishay Vishay Vishay Vishay Vishay - -
Minimum operating temperature -65 °C -65 °C -65 °C - -65 °C -65 °C -65 °C
Base Number Matches 1 1 1 - - 1 1
Parts packaging code - DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
Contacts - 2 2 2 2 2 2
Humidity sensitivity level - - 1 1 - 1 1
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