1N1...A, 1N36..A Series
Vishay High Power Products
Medium Power
Silicon Rectifier Diodes, 12 A
FEATURES
• Voltage ratings from 50 to 1000 V
• High surge capability
• Low thermal impedance
• High temperature rating
• Can be supplied as JAN and JAN-TX devices in
accordance with MIL-S-19500/260
DO-203AA (DO-4)
RoHS
COMPLIANT
• RoHS compliant
PRODUCT SUMMARY
I
F(AV)
12 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
FSM
I
2
t
T
C
V
RRM
Note
(1)
JEDEC registered values
Range
T
C
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
12
(1)
UNITS
A
°C
A
A
2
s
°C
V
150
(1)
230
240
(1)
260
240
- 65 to 200
50 to 1000
(1)
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
T
C
= - 65 °C TO 200 °C
1N1199A
1N1200A
1N1201A
1N1202A
1N1203A
1N1204A
1N1205A
1N1206A
1N3670A
1N3671A
1N3672A
50
(1)
TYPE NUMBER
(2)
V
R(RMS)
, MAXIMUM RMS
REVERSE VOLTAGE
V
T
C
= - 65 °C TO 200 °C
35
(1)
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
T
C
= - 65 °C TO 200 °C
100
(1)
V
RM
, MAXIMUM DIRECT
REVERSE VOLTAGE
V
T
C
= - 65 °C TO 200 °C
50
(1)
100
(1)
150
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
(1)
700
(1)
800
(1)
900
(1)
1000
(1)
100
(1)
150
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
(1)
700
(1)
800
(1)
900
(1)
70
(1)
105
(1)
140
(1)
210
(1)
280
(1)
350
(1)
420
(1)
490
560
630
200
(1)
300
(1)
350
(1)
450
(1)
600
(1)
700
(1)
800
(1)
900
(1)
1000
(1)
1100
(1)
1N3673A
1000
(1)
700
1200
(1)
Notes
(1)
JEDEC registered values
(2)
Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA
Document Number: 93493
Revision: 24-Jun-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
1N1...A, 1N36..A Series
Vishay High Power Products
Medium Power
Silicon Rectifier Diodes, 12 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
SYMBOL
I
F(AV)
TEST CONDITIONS
180° sinusoidal conduction
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Maximum peak one cycle
non-repetitive surge current
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
t = 10 ms
Maximum
I
2
t
for fusing
I
2
t
Maximum I
2
t for individual
device fusing
Maximum I
2
√t
for individual
device fusing
Maximum forward voltage drop
V
RRM
= 50
V
RRM
= 100
V
RRM
= 150
V
RRM
= 200
V
RRM
= 300
Maximum average
reverse current
V
RRM
= 400
V
RRM
= 500
V
RRM
= 600
V
RRM
= 700
V
RRM
= 800
V
RRM
= 900
V
RRM
= 1000
Notes
(1)
JEDEC registered values
(2)
I
2
t for time t = I
2
√t
x
√t
x
x
(3)
Maximum peak reverse current (I
RM
) under same conditions
≈
2 x rated I
R(AV)
I
R(AV)
(3)
VALUES
12
(1)
150
(1)
UNITS
A
°C
Following any rated load
condition and with rated
V
RRM
applied
Following any rated load
condition and with V
RRM
applied following surge = 0
With rated V
RRM
applied
following surge,
initial T
J
= 200 °C
With V
RRM
= 0 following
surge, initial T
J
= 200 °C
230
240
(1)
A
275
285
260
240
370
340
3715
1.35
(1)
3.0
(1)
2.5
(1)
2.25
(1)
2.0
(1)
1.75
(1)
1.5
(1)
A
2
√s
V
A
2
s
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
I
2
√t
(2)
V
FM
t = 0.1 to 10 ms, V
RRM
= 0 following surge
I
F(AV)
= 12 A (38 A peak), T
C
= 25 °C
Maximum rated I
F(AV)
and T
C
1.25
(1)
1.0
(1)
0.9
(1)
0.8
(1)
0.7
(1)
0.6
(1)
mA
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93493
Revision: 24-Jun-08
1N1...A, 1N36..A Series
Medium Power
Vishay High Power Products
Silicon Rectifier Diodes, 12 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating case and
storage temperature range
Maximum internal thermal
resistance, junction to case
Thermal resistance,
case to sink
minimum
Torque applied to nut; non-lubricated threads
maximum
minimum
Mounting torque
maximum
minimum
Torque applied to device case; lubricated threads
maximum
Approximate weight
0.25
Case style
Note
(1)
JEDEC registered values
JEDEC
oz.
DO-203AA (DO-4)
1.43 (12.65)
7.0
g
Torque applied to nut; lubricated threads
1.30 (11.55)
1.17 (10.35)
1.69 (15)
1.07 (9.45)
N·m
(lbf · in)
SYMBOL
T
C
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
TEST CONDITIONS
VALUES
- 65 to 200
(1)
2.0
(1)
°C/W
0.5
1.36 (12)
UNITS
°C
Document Number: 93493
Revision: 24-Jun-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
1N1...A, 1N36..A Series
Vishay High Power Products
Medium Power
Silicon Rectifier Diodes, 12 A
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
Fig. 4 - Maximum Forward Voltage vs. Forward Current
Fig. 2 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
Fig. 5 - Maximum Transient Thermal Impedance,
Junction to Case vs. Pulse Duration
Fig. 3 - Maximum High Level Forward Power Loss vs.
Average Forward Current
Fig. 6 - Maximum Non-Repetitive 50 Hz Surge Current vs.
Number of Current Pulses
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95311
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 93493
Revision: 24-Jun-08
Outline Dimensions
Vishay Semiconductors
DO-203AA (DO-4)
DIMENSIONS
in millimeters (inches)
3.30 (0.13)
4.00 (0.16)
0.8 ± 0.1
(0.03 ± 0.004)
+ 0.3
0
+ 0.01
(0.08
0
)
2
5.50 (0.22) MIN.
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
20.30 (0.80) MAX.
10.20 (0.40)
MAX.
3.50 (0.14)
R 0.40
R (0.02)
Ø 6.8 (0.27)
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
11 (0.43)
Document Number: 95311
Revision: 30-Jun-08
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
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