1N4001 datasheet, PDF - EEWORLD Datasheet

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1N4001: Description1 A, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size114KB，2 Pages; ManufacturerDACHANG; Websitehttp://www.dachang.com.cn

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1N4001 Overview

1 A, SILICON, SIGNAL DIODE

1N4001 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	MINIATURE PACKAGE-2
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
terminal coating	NOT SPECIFIED
Terminal location	AXIAL
Packaging Materials	UNSPECIFIED
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum average forward current	1 A

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SIYU

普通塑封整流二极管

反向电压

50 ---1000 V

正向电流

1.0 A

DO-41

1N4001 ...... 1N4007

General Purpose Plastic Rectifier

Reverse Voltage 50 to 1000 V

Forward Current 1.0 A

特征

Features

·反向漏电流½

Low reverse leakage

·正向浪涌承受½力较强

High forward surge capability

1.0(25.4)

MIN

.034(0.9)

DIA

.028(0.7)

.205(5.2)

.166(4.2)

.107(2.7)

DIA

.080(2.0)

1.0(25.4)

MIN

·高温焊接保证

High temperature soldering guaranteed:

260℃/10

秒,

0.375" (9.5mm)引线长度。

260℃/10 seconds, 0.375" (9.5mm) lead length,

·引线可承受5 磅

(2.3kg)

拉力。

5 lbs. (2.3kg) tension

·引线和管½皆符合ROHS标准。

Lead and body according with ROHS standard

机械数据

Mechanical Data

·端子: 镀锡½向引线

Terminals: Plated axial leads

·极性: 色环端为负极

Polarity: Color band denotes cathode end

·安装½½: 任意

Mounting Position: Any

Unit：inch（mm）

极限值和温度特性

TA = 25℃

除非另有规定。

Maximum Ratings & Thermal Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

符号

Symbols

最大可重复峰值反向电压

Maximum repetitive peak reverse voltage

最大均方根电压

Maximum RMS voltage

最大直流阻断电压

Maximum DC blocking voltage

最大正向平均整流电流

Maximum average forward rectified current

峰值正向浪涌电流 8.3ms单一正弦半波

Peak forward surge current 8.3 ms single half sine-wave

4001

4002

100

4003

200

140

200

4004

400

280

400

1.0

4005

600

420

600

4006

800

560

800

4007

1000

700

1000

单½

Unit

℃/W

RRM

RMS

F(AV)

FSM

θJA

Tj, TSTG

典型热阻

Typical thermal resistance

工½结温和存储温度

Operating junction and storage temperature range

-55 --- +150

℃

电特性

TA = 25℃

除非另有规定。

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Symbols

4001

符号

4002

4003

4004

1.1

5.0

4005

4006

4007

单½

Unit

μA

最大正向电压

Maximum forward voltage

= 1.0A

TA= 25℃

TA=100℃

最大反向电流

Maximum reverse current

典型结电容

4.0V, f = 1MHz

Type junction capacitance

大昌电子

DACHANG ELECTRONICS

1N4001 Related Products

	1N4001	1N4007	1N4005	1N4004	1N4006	1N4003	1N4002
Description	1 A, SILICON, SIGNAL DIODE	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 800 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
Number of terminals	2	2	2	2	2	2	2
Number of components	1	1	1	1	1	1	1
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	TRANSFERRED	TRANSFERRED
packaging shape	round	round	round	round	ROUND	round	round
Package Size	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Terminal form	Wire	Wire	Wire	Wire	WIRE	Wire	Wire
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Packaging Materials	UNSPECIFIED	Plastic/Epoxy	Plastic/Epoxy	UNSPECIFIED	PLASTIC/EPOXY	Glass	Plastic/Epoxy
structure	single	single	single	single	SINGLE	single	single
Shell connection	isolation	isolation	isolation	isolation	ISOLATED	isolation	isolation
Diode component materials	silicon	silicon	silicon	silicon	SILICON	silicon	silicon
Diode type	Signal diode	Signal diode	Signal diode	Signal diode	SIGNAL DIODE	Signal diode	Signal diode
Maximum average forward current	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Processing package description	MINIATURE PACKAGE-2	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	CASE R-1, 2 PIN	ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN	ALF-2, DO-41, 2 PIN	-
terminal coating	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED	-	tin lead
Maximum repetitive peak reverse voltage	-	1000 V	600 V	400 V	800 V	-	100 V

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