1N3879 thru 1N3883R
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 400 V V
RRM
DO-4 Package
V
RRM
= 50 V - 400 V
I
F
= 6 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive p
p
peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤
100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit
50
35
50
6
90
-65 to 150
-65 to 175
100
70
100
6
90
-65 to 150
-65 to 175
200
140
200
6
90
-65 to 150
-65 to 175
300
210
300
6
90
-65 to 150
-65 to 175
400
280
400
6
90
-65 to 150
-65 to 175
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 6 A, T
j
= 25 °C
V
R
= 50 V, T
j
= 25 °C
V
R
= 50 V, T
j
= 150 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit
1.4
15
3
1.4
15
3
1.4
15
3
1.4
15
3
1.4
15
3
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
200
200
200
200
200
nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
2.5
2.5
2.5
2.5
2.5
°C/W
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