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1PS66SB17

Description
SILICON, VHF BAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size10MB,130 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

1PS66SB17 Overview

SILICON, VHF BAND, MIXER DIODE

1PS66SB17 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionPLASTIC PACKAGE-6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
ConfigurationSEPARATE, 3 ELEMENTS
Maximum diode capacitance1 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.35 V
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components3
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum reverse current0.25 µA
Reverse test voltage3 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
Base Number Matches1
RF Manual 16 edition
th
Application and design manual
for High Performance RF products
June 2012
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