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1SV215

Description
29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size37KB,1 Pages
ManufacturerZHAOXINGWEI
Websitehttp://www.alldatasheet.com
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1SV215 Overview

29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE

SMD Type
Silicon Epitaxial Planar Diode
1SV215
Diodes
SOD-323
+0.1
1.7
-0.1
Unit: mm
+0.05
0.3
-0.05
+0.05
0.85
-0.05
Features
High Capacitance Ratio:C2V/C25V=10.5(Typ.)
Low Series Resistance:rs=0.6
(Typ.)
0.475
0.375
+0.1
2.6
-0.1
1.0max
Excellent C-V Characteristics,and Small Tracking Error.
Useful for Small Size Tuner.
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
V
R
V
RM
T
j
T
stg
Value
30
35 (R
L
=10K
125
-55 to +125
)
Unit
V
V
Electrical C haracteristics T a = 25
P aram eter
R everse V oltage
R everse C urrent
C apacitance
C apacitance R atio
S eries R esistance
N ote :
A vailable in m atched group for capacitance to 2.5% .
C (M ax.)-C (M in.)
C (M in.)
(V
R
=2~25V )
S ym bol
V
R
I
R
C
2V
C
25V
C
2V
/C
25V
r
s
V
R
= 5V , f = 470 M H z
C onditions
I
R
= 1
A
M in
30
10
26
2.5
9.5
10.5
0.6
0.8
32
3.2
Typ
M ax
U nit
V
nA
pF
V
R
= 28 V
f = 1 M H z;V
R
= 2 V
f = 1 M H z;V
R
= 25 V
0.025
Marking
Marking
T2
+0.05
0.1
-0.02
+0.1
1.3
-0.1

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