nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA
TELEPHONE: (979) 376-2022
(212) 227400B
FAX: (973) 37WU60
The Cll Silicon Controlled Rectifier is a three junction semiconductor device for use
in tow power switching and control applications requiring blocking voltages up to 600
volts and RMS load currents up to 7.4 amperes.
• Broad Voltage Range (Up to 600V)
• No Gate Bias Required
• Long Electical Creepage Path
• High Gate Sensitivity
• Over Three Years of Successful Field Experience
INSULATING HARDWARE
KIT*
©COPPER TERMINAL,ois
THICK. TIN PLATED
©BRASS WASHER.O35 THICK
NICKEL PLATED
©MICA WASHERS, TWO. 625
O.D., ZO4 I 0,,.DOS THICK
0 TEFLON WASHER..270 O.D.
.204I0...05O THICK
if
© 10-32 STEEL NUT
CADMIUM PLATED
(D LOCK WASHER,
CADMIUM PLATED
STEEL
I, COMPLCTt THRUM FXTEMD TO WfTMN I-l/l
OF HUD.
t HMefTCft OP UWDMUKD POKTIOM ,ttO MAI,
• AVAILABLE UPON REQUEST
i. MHUJW omnnwnM
<*
THOI
* CAM « MOM COMefCTIQN.
Typ»
C11U
C11F
C11A
C11G
CUB
C11H
C11C
CUD
CUE
CUM
(2N1770)
(2N1771)
(2N1772)
(2N1773)
(2N1774)
(2N1775)
(2N1776)
(2N1777)
(2N1778)
(2N2619)
Minimum Forward Breakover
Voltage (V
B
,,)t
Tj = -65 Cto+I25"C
25 Volts*
50 Volts*
100 Volts*
150 Volts*
200 Volts*
250 Volts*
300 Volts*
400 Volts*
500 Volts*
600 Volts*
Repetitive Peak Reverie
Voltage (PRV)f
Tj = -65°Cto+123°C
25 Volts*
50 Volts*
100 Volts*
150 Volts*
200 Volts*
250 Volts*
300 Volts*
400 Volts*
500 Volts*
600 Volts*
Traniient Peak Rever«e
Volto
B
e (Non-recurrent < 5 MilliMc.)t
Tj = — 65°Clo+m°C
40 Volts*
75 Volts*
150 Volts*
225 Volts*
300 Volts*
350 Volts*
400 Volts*
500 Volts*
600 Volts*
720 Volts*
tValues apply for zero or negative gate voltage only. Maximum case to ambient thermal resistance for which maximum PR\s apply e
MAXIMUM ALLOWABLE RATINGS
(C11U thru CUD) 480 Volts
(CUE and CUM) 720 Volts
RMS Forward Current
(All conduction angles) 7.4
Amperes
Average Forward Current (I,,)
4.7 Amperes* at 60°C Case (Half Wave Rectified)
For other operating conditions see Chart 3.
„..
_60
Amperes*
Peak One Cycle Non-recurrent Surge Current (i
s
,,
ri;
,,)-
Peak Surge Current During Turn-on Time Interval _
See Chart 7
I-t (for fusing)
Calculate from Chart 8
Peak Gate Power (p,
;
)
5
Watts*
Average Gate Power (P,
;
)
0.5
Watt*
' Peak Gate Current (i
n
)
2.0
Amperes*
Peak Gate Voltage (v
(;
) (Forward and Reverse)
10
Volts*
Operatirig Temperature
-65°Cto-f-125°C*
Storage Temperature
...
-eS^to-f-lSO'C*
Stud Torque
15 inch-pounds
'Indicates data included on JEDEC type number registration.
"NOT TO EXCEED GATE POWER RATINGS
.
r
...,.,,.,„,„,,
Repetitive Peak Forward Blocking Voltage (PFV)
CHARACTERISTICS
T«t
Symbol
Min,
TYP-
4,5
4.5
4.5
4.0
3.0
2.5
1.5
1.0
1.0
1.0
Max.
Unit.
Tett Condition!
Peak Reverse and Forward
Blocking Current!
C11U (2N1770)
C11F (2N1771)
C11A (2N1772)
C11G (2N1773)
CUB (2N1774)
C11H (2N1775)
C11C (2N1776)
C11D (2N1777)
CUE (2N1778)
CUM (2N2619)
Full Cycle Avg. Reverse and
Forward Blocking Currentf
C11U (2N1770)
C11F (2N1771)
C11A (2N1772)
C11G (2N1773)
CUB (2N1774)
C11H (2N1775)
C11C (2N1776)
CUD (2N1777)
CUE (2N1778)
CUM (2N2619)
Gate Current to Fire
in and is
9.0
9.0
9.0
8.0
6.0
5.0
4.0
2.0
2.0
2.0
ma
ma
ma
ma
ma
ma
ma
ma
ma
ma
Il«.U 1
and
Is(AV)
T.i = 125°C, Gate Open
VA
(
- = V . - » = 25 Volts Peak
50
100
150
200
250
300
400
500
600
Tr = GO°C, L. = 4.7A, half sine wave
180° Conduction Angle
C11 SERIES
2IM 1770-78
2N2619
——
Ir.
f
Gate Voltage to Fire
V,;
f
2.3
2.3
2.3
2.0
1.5
1.3
0.8
0.5
0.5
0.5
10
20
4
1.3
0.7
1.6
8.0
1.0
15
4.5*
4.5*
4.5*
4.0*
3.0*
2.5*
2.0*
1.0*
1.0*
1.0*
15
30*
8
2.0*
0.3*
Peak Forward Voltage Drop
Holding Current
Turn-on Time
Turn-off Time
VK
In
t, + tr
1.85
t,,rr
Thermal Resistance
_
0.,-r
1.5
3.1
V.,.- = 12 Vdc, T., = -65° to + 125°C,
R,. = 250 ohms
Vdc
v
A I
- - Rated, T., - 125°C, R,. -= 250 ohms
V
T.i = 25°C,
it-
— 15 a (single sinusoidal
pulse, 4 ms wide)
mAdc
25"C
9t\°r*
i
1fl a v
P a
ted Gate
Msec
T
Supply: 7 volt open circuit 20 ohm, 0.1
Msec max. rise time.
1
9*\C*
i
fi a i
£ a
iusec
T
v,
v
< (Reapplied) = Rated. Rate of Rise of
Reapplied Forward Blocking Voltage =
20 volts per microsecond maximum.
"C/Watt Junction to Case,
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
mAdc
Vdc
v , , = v r
A
— 25 Volts Peak
50
100
150
200
250
300
400
500
600
V.M = 12Vdc, T., = 25°C, Rr. =; 250 ohms
V
V
1 9VH/i T
lO\fAn
T
fit;
0
*"'
T?
lQt\°n
P
fValues apply for zero or negative gate voltage. Maximum case to ambient thermal resistance for which maximum PRV
ratings apply = 18 °C per watt.
"Indicates data included on JEDEC type number registration.
2
INSTANTANEOUS FORWARD VOLTAQE DROP-VOLTS
1
6
a
10
12
INSTANTANEOUS FORWARD VOLTAGE DROP-VOLTS
1. MAXIMUM FORWARD CHARACTERISTICS
CONDUCTING STATE
2. MAXIMUM FORWARD CHARACTERISTICS
HIGH CURRENT LEVEL — CONDUCTING STATE
MCU
京公网安备 11010802033920号
EEWORLD
