UNISONIC TECHNOLOGIES CO., LTD
3N70A
700V, 3A N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
3N70A
is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in the high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
Power MOSFET
FEATURES
* R
DS(ON)
≤4.0Ω
@V
GS
= 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N70AL-TN3-R
3N70AG-TN3-R
Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
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1 of 7
QW-R502-620.A
3N70A
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
3.0
A
Continuous Drain Current
I
D
3.0
A
Pulsed Drain Current (Note 2)
I
DM
12
A
Single Pulsed (Note 3)
E
AS
200
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
7.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
50
W
°С
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 64mH, I
AS
= 2.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤3.0A,
di/dt≤200A/μs, V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATING
110
2.5
UNIT
°C/W
°C/W
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QW-R502-620.A
3N70A
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250μA
Power MOSFET
MIN TYP MAX UNIT
700
10
100
-100
0.6
2.0
2.8
350
50
5.5
10
30
20
30
10
2.7
4.9
4.0
4.0
450
65
32
40
70
100
70
13
V
μA
nA
nA
V/°С
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
µC
V
DS
= 700 V, V
GS
= 0 V
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250 µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0 V, f =
Output Capacitance
C
OSS
1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 30V, I
D
= 1.0 A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 480V,I
D
= 3.0A,
Gate-Source Charge
Q
GS
V
GS
= 10V (Note 1, 2)
Gate-Drain Charge
Q
DD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 3.0 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
V
GS
= 0 V, I
S
= 3.0 A,
Reverse Recovery Time
t
rr
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
1.4
3.0
12
210
1.2
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QW-R502-620.A
3N70A
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-620.A
3N70A
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DD
V
DS
V
GS
R
G
10%
t
D(ON)
t
R
Power MOSFET
V
DS
90%
10V
Pulse Width≤1μs
Duty Factor≤0.1%
D.U.T.
V
GS
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
12V
50kΩ
0.2μF
0.3μF
Same Type
as D.U.T.
10V
Q
GS
Q
G
V
DS
V
GS
DUT
3mA
Q
GD
V
GS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-620.A
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