UNISONIC TECHNOLOGIES CO., LTD
3N60
3A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
3N60
is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
Power MOSFET
FEATURES
* V
DS
= 600V, I
D
= 3A
* R
DS(ON)
= 3.6Ω @V
GS
= 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N60L-TA3-T
3N60G-TA3-T
3N60L-TF1-T
3N60G-TF1-T
3N60L-TF3-T
3N60G-TF3-T
3N60L-TM3-R
3N60G-TM3-R
3N60L-TN3-R
3N60G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
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Tape Reel
Note:
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Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-110,G
3N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
Power MOSFET
RATINGS
UNIT
Drain-Source Voltage
600
V
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
3.0
A
Continuous Drain Current
3.0
A
Pulsed Drain Current (Note 2)
12
A
Single Pulsed (Note 3)
200
mJ
Avalanche Energy
7.5
mJ
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
4.5
V/ns
TO-220
75
Power Dissipation
P
D
W
TO-220F/TO-220F1
34
TO-251/TO-252
50
Junction Temperature
T
J
+150
℃
Operating Temperature
T
OPR
-55 ~ +150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 64mH, I
AS
= 2.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
3.0A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220
TO-220F/TO-220F1
TO-251/TO-252
TO-220
TO-220F/TO-220F1
TO-251/TO-252
SYMBOL
θ
JA
RATING
62.5
62.5
110
1.67
3.68
2.5
UNIT
°C/W
Junction to Ambient
Junction to Case
θ
JC
°C/W
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2 of 8
QW-R502-110,G
3N60
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
600
10
100
-100
0.6
2.0
2.8
350
50
5.5
10
30
20
30
10
2.7
4.9
4.0
3.6
450
65
7.5
30
70
50
70
13
V
μA
nA
nA
V/℃
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 600 V, V
GS
= 0 V
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature
I = 250
μA,
△
BV
DSS
/△T
J D
Coefficient
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0 V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
V
DD
= 300V, I
D
= 3.0 A,
Turn-On Rise Time
t
R
R
G
= 25Ω
Turn-Off Delay Time
t
D(OFF)
(Note 1, 2)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 480V,I
D
= 3.0A,
Gate-Source Charge
Q
GS
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
DD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 3.0 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
= 3.0 A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
1.4
3.0
12
210
1.2
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3 of 8
QW-R502-110,G
3N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-110,G
3N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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www.unisonic.com.tw
5 of 8
QW-R502-110,G
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