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3N252

Description
1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size95KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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3N252 Overview

1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

3N252 Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Maximum non-repetitive peak forward current30 A
Number of components4
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Base Number Matches1
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay Semiconductors
Glass Passivated Single-Phase Bridge Rectifier
Case Style KBPM
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
j
max.
1.5 A
50 V to 1000 V
50 A
5 µA
1.0 V
150 °C
~
~
~
~
Features
UL Recognition file number E54214
Ideal for printed circuit board
High surge current capability
High case dielectric strength
Meets MSL level 1, per J-STD-020C
Mechanical Data
Case:
KBPM
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Silver plated (E4 Suffix) leads, solderable
per J-STD-002B and MIL-STD-750, Method 2026
Polarity:
As marked on body
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for Switching Power Supply, Home Appli-
ances, Office Equipment, and Telecommunication
applications
Maximum Ratings
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbol
KBP
005M
3N246
* Maximum repetitive peak reverse voltage
* Maximum RMS voltage
* Maximum DC blocking voltage
Max. average forward output rectified current
at T
A
= 40 °C
* Peak forward surge current single half sine-
wave superimposed on rated load
Rating for fusing (t < 8.3 ms)
* Operating junction and storage temperature
range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
50
35
50
KBP
01M
3N247
100
70
100
KBP
02M
3N248
200
140
200
KBP
04M
3N249
400
280
400
1.5
50
30
10
- 55 to + 150
KBP
06M
3N250
600
420
600
KBP
08M
3N251
800
560
800
KBP
10M
3N252
1000
700
1000
V
V
V
A
A
A
2
sec
°C
Unit
Document Number 88531
03-Dec-04
www.vishay.com
1

3N252 Related Products

3N252 KBP08M 3N250 3N249 3N248 3N247 3N246
Description 1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code unknow unknown unknow unknow unknow unknow unknow
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
Maximum non-repetitive peak forward current 30 A 50 A 30 A 30 A 30 A 30 A 30 A
Number of components 4 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 1 A 1.5 A 1 A 1 A 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 1000 V 800 V 600 V 400 V 200 V 100 V 50 V
surface mount NO NO NO NO NO NO NO
Maker Vishay Vishay Vishay Vishay Vishay - -
Base Number Matches 1 1 - - - 1 1
Is it Rohs certified? - incompatible - incompatible incompatible incompatible incompatible

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