3N190
P-CHANNEL MOSFET
The 3N190 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N190
LOW GATE LEAKAGE CURRENT
I
GSS
≤ ± 10pA
LOW TRANSFER CAPACITANCE
C
rss
≤ 1.0pF
1
The hermetically sealed TO-78 package is well suited
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
for high reliability and harsh environment applications.
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
(See Packaging Information).
Operating Junction Temperature
‐55°C to +135°C
Maximum Power Dissipation
Continuous Power Dissipation (one side)
300mW
3N190 Features:
Continuous Power Dissipation (one side)
525mW
MAXIMUM CURRENT
Very high Input Impedance
Drain to Source
2
50mA
High Gate Breakdown Voltage
MAXIMUM VOLTAGES
Low Capacitance
Drain to Gate or Drain to Source
2
‐30V
2,3
Transient Gate to Source
±125V
Gate‐Gate Voltage
±80V
3N190 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
BV
DSS
Drain to Source Breakdown Voltage
‐40
‐‐
‐‐
I
D
= ‐10µA
BV
SDS
Source to Drain Breakdown Voltage
‐40
‐‐
‐‐
I
S
= ‐10µA, V
BD
= 0V
V
V
GS
Gate to Source Voltage
‐3.0
‐‐
‐6.5
V
DS
= ‐15V, I
D
= ‐500µA
V
GS(th)
Gate to Source Threshold Voltage
‐2.0
‐‐
‐5.0
V
DS
= ‐15V, I
D
= ‐500µA
‐2.0
‐‐
‐5.0
V
DS
= V
GS
, I
D
= ‐10µA
I
GSSR
Gate Reverse Leakage Current
‐‐
‐‐
10
V
GS
= 40V
I
GSSF
Forward Gate Leakage Current
‐‐
‐‐
‐10
V
GS
= ‐40V
pA
I
DSS
Drain to Source Leakage Current
‐‐
‐‐
‐200
V
DS
= ‐15V
I
SDS
Source to Drain Leakage Current
‐‐
‐‐
‐400
V
SD
= ‐15V V
DB
= 0
I
D(on)
Drain Current “On”
‐5.0
‐‐
‐30
mA
V
DS
= ‐15V, V
GS
= ‐10V
r
DS(on)
Drain to Source “On” Resistance
‐‐
‐‐
300
Ω
V
DS
= ‐20V, I
D
= ‐100µA
4
g
fs
Forward Transconductance
1500
‐‐
4000
µS
V
DS
= ‐15V, I
D
= ‐5mA , f = 1kHz
The 3N190 is a dual enhancement mode P-Channel
Mosfet and is ideal for space constrained applications
and those requiring tight electrical matching.
Y
os
C
iss
Input Capacitance
‐‐
‐‐
4.5
pF
V
DS
= ‐15V, I
D
= ‐5mA , f = 1MHz
C
rss
Reverse Transfer Capacitance
‐‐
‐‐
1.0
C
oss
Output Capacitance
‐‐
‐‐
3.0
MATCHING CHARACTERISTICS 3N190
SYMBOL
LIMITS
CHARACTERISTIC
UNITS
CONDITIONS
MIN
MAX
g
fs1
/g
fs2
Forward Transconductance Ratio
0.85
1.0
ns
V
DS
= ‐15V, I
D
= ‐500µA , f = kHz
V
GS1‐2
Gate Source Threshold Voltage
‐‐
100
mV
V
DS
= ‐15V, I
D
= ‐500µA
5
Differential
V
DS
= ‐15V, I
D
= ‐500µA, T
S
= ‐55°C to +25°C
∆V
GS1‐2
/∆T
Gate Source Threshold Voltage
5
‐‐
100
µV/°C
Differential Change with Temperature
V
DS
= ‐15V, I
D
= ‐500µA, T
S
= +25°C to +125°C
SWITCHING CHARACTERISTICS
SYMBOL
CHARACTERISTIC
t
d(on)
Turn On Delay Time
t
r
Turn On Rise Time
t
off
Turn Off Time
MIN
‐‐
‐‐
‐‐
TYP
‐‐
‐‐
‐‐
MAX
15
30
50
UNITS
ns
CONDITIONS
V
DD
= ‐15V, I
D(on)
= ‐5mA, R
G
= R
L
= 1.4KΩ
Click To Buy
Output Admittance
‐‐
‐‐
300
Note 1 ‐ Absolute maximum ratings are limiting values above which 3N190 serviceability may be impaired.
Note 2 – Per Transistor
Note 3 – Approximately doubles for every 10
°C in T
A
Device Schematic
Note 4 – Measured at end points,
T
A
and T
B
Note 5 – Pulse: t= 300µS, Duty Cycle ≤ 3%
TO-78 (Bottom View)
Available Packages:
3N190 in TO-72
3N190 in bare die.
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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