LAB
GENERAL PURPOSE
PNP TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
MECHANICAL DATA
Dimensions in mm (inches)
0.51 ± 0.10
(0.02 ± 0.004)
0.31 rad.
(0.012)
SEME
2N3250CSM
FEATURES
• SILICON PLANAR EPITAXIALPNP
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
A
1.40
(0.055)
max.
2.54 ± 0.13
(0.10 ± 0.005)
3
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
A=
0.76 ± 0.15
(0.03 ± 0.006)
0.31 rad.
(0.012)
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
1.02 ± 0.10
(0.04 ± 0.004)
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 1 – Base
PAD 2 – Emitter
PAD 3 – Collector
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
STG
, T
J
R
θJA
R
θJC
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Total Device Dissipation @ T
A
=25°C
Derate above 25°C
Total Device Dissipation @ T
A
=25°C
Derate above 25°C
Operating and Storage Temperature Range
Thermal Resistance Junction – Ambient
Thermal Resistance Junction – Case
-40V
-50V
-5.0V
-200mA
0.36W
2.06mW / °C
1.2W
6.9mW / °C
–65 to +200°C
486°C/W
146°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 2539
Issue 2
LAB
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
Parameter
Test Conditions
V
(BR)CEO*
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BL
Collector – Emitter Breakdown Voltage I
C
= -10mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Cut-off Current
Base Cutoff Current
I
C
= 10µA
I
E
= 10µA
V
CE
= -40V
V
CE
= -40V
I
C
= -10mA
I
C
= -50mA
I
C
= -10mA
I
C
= -50mA
V
CE
= -1V
h
FE*
DC Current Gain
V
CE
= -1V
V
CE
= -1V
SMALL SIGNAL CHARACTERISTICS
SEME
2N3250CSM
Min.
-40
-50
-5
Typ.
Max. Unit
V
-20
-50
-25
-0.5
I
B
= 0
I
E
= 0
I
C
= 0
V
EB
= -3V
V
EB
= -3V
I
B
= -1mA
I
B
= - 5mA
I
B
= -1mA
I
B
= - 5mA
I
C
= -0.1mA
I
C
= -1mA
I
C
= -10mA
I
C
= -10mA
I
E
= 0
I
C
= 0
nA
ON CHARACTERISTICS
V
CE(sat)
V
BE(sat)*
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
V
V
-0.6
40
45
50
-0.9
-1.2
—
150
f
t
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
N
F
rb’C
C
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Noise Figure
Collector Base Time Constant
V
CE
= -20V
f = 100MHz
V
CB
= -10V
f = 1.0MHz
V
EB
= -1.0V
f = 1.0MHz
250
6.0
8.0
1.0
6.0
10
50
4.0
300
40
6
250
MHz
pF
pF
kΩ
x 10
-4
—
µhmos
dB
ps
V
CE
= -10V
f = 1.0KHz
V
CE
= -5V
f = 100Hz
V
CE
= -20V
f = 131.8MHz
V
CC
= -3V
I
C
= -10mA
V
CC
= -3V
I
C
= -1.0mA
I
C
= -100µA
R
S
= -1kΩ
I
C
= -100mA
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
V
BE
= 0.5V
I
B1
= -1mA
I
C
= -10mA
35
35
175
50
ns
I
B1
= I
B1
= -1mA
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 2539
Issue 2
ARM Technology
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