TN6707A
TN6707A
NPN General Purpose Amplifier
• These devices is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0A
• Sourced from process 39.
C
BE
TO-226
Absolute Maximum Ratings*
T
A
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
FPN660
80
100
5.0
1.2
-55 ~ +150
Units
V
V
V
A
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Parameter
Test Conditions
I
C
= 10mA, I
B
= 0
I
E
= 100µA, I
E
= 0
I
E
= 1.0mA, I
C
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 5.0V, I
C
= 0
V
CE
= 2.0V, I
C
= 50mA
V
CE
= 2.0V, I
C
= 250mA
V
CE
= 2.0V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1.0A, I
B
= 100mA
V
CE
= 2.0V, I
C
= 1.0A
V
CE
= 5.0V, I
C
= 200mA, f = 20MHz
V
CE
= 5.0V, I
C
= 50mA, f = 20MHz
2.5
50
40
40
25
Min.
80
100
5.0
0.1
0.1
Max.
Units
V
V
V
µA
µA
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
On Characteristics *
250
0.5
1.0
1.5
20
V
V
V
MHz
MHz
V
CE
(sat)
V
BE
(on)
h
fe
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Product
Small Signal Characteristics
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
1.0
8.0
50
125
Units
W
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, January 2003
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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No Identification Needed
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Obsolete
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©2003 Fairchild Semiconductor Corporation
Rev. I2
PCB Design
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