Analog Power
P - Channel Logic Level MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
r
DS(on)
assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are voltage control
small signal switch, power management in
portable and battery-powered products and
most low current high side switch.
•
•
•
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Fast Switch
Low Gate Charge
High Saturation Current
Miniature SOT-23 Surface Mount Package
Saves Board Space
o
AM2313P
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
10 @ V
GS
= -10 V
-60
20 @ V
GS
= -4.5V
I
D
(A)
-0.2
-0.12
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
-60
Drain-Source Voltage
V
DS
V
V
GS
±20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
a
a
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
±0.12
±0.09
±1
0.24
0.36
0.29
-55 to 150
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
T HJA
Maximum Units
350
400
o
t <= 5 sec
Steady-State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2313_B
Analog Power
o
AM2313P
SPECIFICATIONS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Switch Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
I
D(on)
A
Symbol
Test Conditions
V
GS
= 0 V, I
D
= -10 µA
V
DS
= -48 V, V
GS
= 0 V
V
DS
= -48 V, V
GS
= 0 V, T
J
= 55 C
V
DS
= 0 V, V
GS
= ±20 V
o
Limits
Unit
Min Typ Max
-60
-1
-150
±10
µA
nA
V
A
Switch On Characteristics
Gate-Threshold Voltage
A
On-State Drain Current
Drain-Source On-Resistance
Forward Tranconductance
Diode Forward Voltage
A
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= -5 V, V
GS
= -4.5 V
V
GS
= -10 V, I
D
= -0.5 A
V
GS
= -10 V, I
D
= -0.5 A T
J
= 55 C
V
GS
= -4.5 V, I
D
= -0.25 A
V
DS
= -5 V, I
D
= -1.1 A
I
S
= 0.4 A, V
GS
= 0 V
o
-1.0
-0.6
-1.7
1
1.5
1.3
-3.5
10
12
20
-1.5
2.5
r
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Ω
mS
V
75
435
-0.80
1.8
0.3
0.4
2.7
6.8
10
7.8
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= -48 V, V
GS
= -10 V,
I
D
= -0.5 A
nC
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
V
DS
= -25 V, I
D
= -0.5 A,
R
G
= 6
Ω,
V
GEN
= -10 V
5.5
13
16
16
ns
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power
(APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2313_B
Analog Power
AM2313P
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2313_B
Analog Power
AM2313P
Typical Electrical Characteristics
Figure 9. Capacitance Characteristic
Figure 10. Gate Charge Characteristic
Normalized Thermal Transient Impedance, Junction to Ambient
Figure 11. Transient Thermal Response Curve
4
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2313_B
Analog Power
AM2313P
Package Information
5
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2313_B
Embedded System
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