AM27C010-55DIB datasheet, PDF - EEWORLD Datasheet

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AM27C010-55DIB: Description1 Megabit ( 128 K x 8-Bit ) CMOS EPROM Speed options as fast as 45 ns; Categorystorage storage; File Size650KB，9 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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AM27C010-55DIB Overview

1 Megabit ( 128 K x 8-Bit ) CMOS EPROM Speed options as fast as 45 ns

AM27C010-55DIB Parametric

Parameter Name	Attribute value
Maker	Rochester Electronics
package instruction	DIP,
Reach Compliance Code	unknow
Maximum access time	55 ns
JESD-30 code	R-CDIP-T32
JESD-609 code	e0
length	42.1005 mm
memory density	1048576 bi
Memory IC Type	UVPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Maximum seat height	5.588 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm

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TABLE 5

AM27C010

* For complete Rochester ordering guide, please refer to page 2 *

Rochester Electronics guarantees performance of its semiconductor products to the original OEM specifications. “Typical” values are for reference purposes

only. Certain minimum or maximum ratings may be based on product characterization, design, simulation, or sample testing. Rochester Electronics reserves

the right to make changes without further notice to any specification herein.

SPECIFICATION NUMBER: AM27C010-CIM (A) REV -

Page 1 of 8

Specification Number AM27C010-CIM (A) REV A

Page 1 of 9

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