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BCP030T-70

Description
HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25μm x 300μm gate)
File Size758KB,6 Pages
ManufacturerBEREX
Websitehttp://www.berex.com/
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BCP030T-70 Overview

HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25μm x 300μm gate)

BCP030T-70
HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25µm x 300µm gate)
The BeRex BCP030T-70 is a GaAs power pHEMT in an industry standard, 70 mil. ceramic, low parasitic, surface-
mountable package. It’s ideally suited for applications requiring low noise with high gain and excellent PAE over a
broad frequency range of 1000 MHz to 26 GHz.
PRODUCT FEATURES
70 mil. surface-mountable ceramic package
24 dBm P1dB @12 GHz (typical)
12 dB Gain @12 GHz (typical)
0.25µm X 300µm recessed gate
RoHS-compliant/lead-free
APPLICATIONS
Commercial
Military / Hi-Rel.
Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) T
a
= 25° C
SYMBOLS
P
1dB
G
1dB
PAE
I
dss
G
m
V
p
BV
gd
BV
gs
R
th
PARAMETER/TEST CONDITIONS
Output Power @ P
1dB
(V
ds
= 6V, I
ds
= 50% I
dss
)
Gain @ P
1dB
(V
ds
= 6V, I
ds
= 50% I
dss
)
PAE @ P
1dB
(V
ds
= 6V, I
ds
= 50% I
dss
)
Saturated Drain Current (V
gs
= 0V, V
ds
= 2.0V)
Transconductance (V
ds
= 3V, Vgs = 50% I
dss
)
Pinch-off Voltage (I
ds
= 0.2 mA, V
ds
= 2V)
Drain Breakdown Voltage (I
g
= 0.2 mA, source open)
Source Breakdown Voltage (I
g
= 0.2 mA, drain open)
Thermal Resistance
-2.5
TEST
FREQUENCY
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
23.0
22.5
10.5
7.0
TYPICAL
24
23.5
12.0
8.5
70
60
90
120
-1.1
-15
-13
320
-0.5
Max
UNIT
dBm
dB
%
120
mA
mS
V
V
V
° C/W
60
www.berex.com
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2012
st
September 2012
Rev. A

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