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BCP080T

Description
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
File Size580KB,5 Pages
ManufacturerBEREX
Websitehttp://www.berex.com/
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BCP080T Overview

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCP080T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm)
The BeRex BCP080T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 800 micron gate width
making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5
GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band
applications. The BCP080T is produced using state of the art metallization with SI
3
N
4
passivation and is screened to
assure reliability.
PRODUCT FEATURES
30 dBm Typical Output Power
10.5 dB Typical Gain @ 12 GHz
0.25 X 800 Micron Recessed Gate
APPLICATIONS
Commercial
Military / Hi-Rel.
Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) T
a
= 25° C
SYMBOL
P
1dB
G
1dB
PAE
I
dss
G
m
V
p
BV
gd
BV
gs
R
th
PARAMETER/TEST CONDITIONS
Output Power @ P
1dB
(V
ds
= 8V, I
ds
= 50%
I
dss
)
Gain @ P
1dB
(V
ds
= 8V, I
ds
= 50% I
dss
)
PAE @ P
1dB
(V
ds
= 8V, I
ds
= 50% I
dss
)
Saturated Drain Current (V
gs
= 0V, V
ds
= 1.0V)
Transconductance (V
ds
= 3V, V
gs
= 50% I
dss
)
Pinch-off Voltage (I
ds
= 800 µA, V
ds
= 2V)
Drain Breakdown Voltage (I
gd
= 0.8 mA, source open)
Source Breakdown Voltage (I
g
= 0.8 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
-2.5
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
29.0
9.5
TYPICAL
30.0
30.0
10.5
7.5
60
55
240
320
-1.1
-15
-13
61
-0.5
-12.0
320
MAX.
UNIT
dBm
dB
%
mA
mS
V
V
V
°C/W
160
www.berex.com
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
st
September 2011
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