EEWORLDEEWORLDEEWORLD

Part Number

Search

BD135

Description
1.5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size348KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet Parametric Compare View All

BD135 Online Shopping

Suppliers Part Number Price MOQ In stock  
BD135 - - View Buy Now

BD135 Overview

1.5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-126

BD135 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current1.5 A
Maximum Collector-Emitter Voltage45 V
Processing package descriptionTO-126, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption1.25 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor25
Rated crossover frequency190 MHz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BD135
BD137
BD139

)HDWXUHV
0D[LPXP5DWLQJV
Rating
Collector-Emitter Voltage
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
DC Current Gain - h
FE
= 40 (Min) @I
C
= 150mAdc
Complementary with BD136, BD138, BD140
Symbol
BD135
BD137
BD139
V
CEO
Value
45
60
80
45
60
80
5.0
1.5
0.5
1.25
10
12.5
100
-55 to +150
10
100
Unit
Vdc
Power Transistors
NPN Silicon
45,60,80 Volts

A
K
N
Collector-Base Voltage
BD135
BD137
BD139
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @T
A
=25
Derate above 25
Total Device Dissipation @T
C
=25
Derate above 25
Operating & Storage Temperature Range
Maximum Thermal Resistance Junction to
Case
Maximum Thermal Resistance Junction to
Ambient Air
V
CBO
V
EBO
I
C
I
B
P
D
P
D
T
J
, T
STG
R

-&
R

-$
Vdc
Vdc
Adc
Adc
Watt
mW/
Watt
mW/
E
D

B
M
:
:
:
:
:
:
/W
:
/W
:
:

1
2
3
L
G



(OHFWULFDO &KDUDFWHULVWLFV # 
°
& 8QOHVV 2WKHUZLVH 6SHFLILHG
Symbol
Parameter
Collector-Emitter Sustaining Voltage*
(I
C
=30mA,I
B
=0) BD135
BD137
BD139
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
(V
CB
=30Vdc, I
E
=0, T
C
=125 )
Emitter Cutoff Current
(V
BE
=5.0Vdc, I
C
=0)
DC Current Gain*
(I
C
=5mAdc, V
CE
=2Vdc)
(I
C
=0.5Adc, V
CE
=2Vdc)
(I
C
=150mAdc, V
CE
=2Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter ON Voltage
(V
CE
=2V, I
C=
0.5A)
Min
Max
Units
Vdc
45
60
80
0.1
10
10
µAdc
µAdc
C
2)) &+$5$&7(5,67,&6
BV
CEO
I
CBO
F
PIN 1.
PIN 2.
PIN 3.
DIMENSIONS
Q
EMITTER
COLLECTOR
BASE
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(on)
:
J
25
25
40
250
0.5
1
Vdc
Vdc
CLASSIFICATION OF H
FE(3)
Rank
Range
6
40-
100
10
63- 160
16
100-
250










L
M
N
Q
 

0.291
0.417
0.602
4
0.118
0.026
0.046
0.090TYP
0.098
0.083
0.000
0.043
0.018




0.307
0.433
0.618
1
0.126
0.034
0.054
0.114
0.091
0.012
0.059
0.024






7.40
7.80
10.60
11.00
15.30
15.70
3.90
4.10
3.00
3.20
0.66
0.86
1.17
1.37
2.290TYP
2.50
2.90
2.10
2.30
0.00
0.30
1.10
1.50
0.45
0.60
 
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
Notes: 1.
High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
www.mccsemi.com
1 of 3
Revision: A
2011/01/01

BD135 Related Products

BD135 BD137 BD139
Description 1.5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-126 NPN power transistors 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
Number of terminals 3 - 3
Transistor polarity NPN - NPN
Maximum collector current 1.5 A - 1.5 A
Maximum Collector-Emitter Voltage 45 V - 80 V
Processing package description TO-126, 3 PIN - TO-126, 3 PIN
state ACTIVE - ACTIVE
packaging shape RECTANGULAR - Rectangle
Package Size FLANGE MOUNT - Flange mounting
Terminal form THROUGH-HOLE - THROUGH-hole
terminal coating TIN LEAD - tin lead
Terminal location SINGLE - single
Packaging Materials PLASTIC/EPOXY - Plastic/Epoxy
structure SINGLE - single
Shell connection COLLECTOR - COLLECTOR
Number of components 1 - 1
transistor applications SWITCHING - switch
Transistor component materials SILICON - silicon
Maximum ambient power consumption 1.25 W - 1.25 W
Transistor type GENERAL PURPOSE POWER - universal power supply
Minimum DC amplification factor 25 - 25
Rated crossover frequency 190 MHz - 190 MHz
TI 9B96 development board deadlock problem solution
After using TI development boards for a while , I found that TI chips are easy to lock up. Someone around me has locked up, and many people on the Internet have also locked up. Fortunately, I also had...
youki12345 Microcontroller MCU
Find an ISP expert
I am determined to learn ISP technology, but I know nothing about microcontrollers. I would like to ask for your advice and where should I start. I am sincerely willing to learn from you!...
wo1301 Embedded System
2011 National Competition Retest List
[i=s] This post was last edited by paulhyde on 2014-9-15 03:48 [/i] 2011 National Competition Retest ListQuestion AQuestion CQuestion E[i=s] This post was last edited by paulhyde on 2014-9-15 03:48 [/...
wstt Electronics Design Contest
Ask lanchpad about the default clock
I soldered the 32K crystal oscillator with the lanchpad. The register is in the default state. What are ACLK, MCLK, and SMCLK at this time? ? Thank you. ....
weihei TI Technology Forum
Is there anyone on the forum who has done vector control of high voltage motors?
Discussion on vector control algorithm, everyone is welcome to discuss!...
eeleader Industrial Control Electronics
How to eliminate the 20mVESD voltage on the instrument shell
[i=s]This post was last edited by jameswangsynnex on 2015-3-3 19:59[/i] We made an instrument and found some ESD problems during acceptance. We used a multimeter to measure the voltage between the ins...
zhangbs327 Mobile and portable

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 749  2904  1240  27  156  16  59  25  1  4 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号