BDW93C datasheet, PDF - EEWORLD Datasheet

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BDW93C: Description12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size65KB，1 Pages; ManufacturerTiger Electronic Co.,Ltd.; Websitehttp://www.tgselec.com/

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BDW93C Overview

12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB

BDW93C Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	12 A
Maximum Collector-Emitter Voltage	100 V
Processing package description	PLASTIC, TO-220, FM-3
state	DISCONTINUED
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	NOT SPECIFIED
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	DARLINGTON
Shell connection	COLLECTOR
Number of components	1
Transistor component materials	SILICON
Maximum ambient power consumption	2 W
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	100

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TIGER ELECTRONIC CO.,LTD

Product specification

Complementary Power Darlington TR

BDW93C / BDW94C

DESCRIPTION

It is intented for use in power

amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25

O

C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Base Current

Total Dissipation at

Max. Operating Junction Temperature

Symbol

V

CBO

V

CEO

I

C

I

B

P

tot

T

j

T

stg

Value

100

12

0.2

80

150

-55~150

Unit

V

A

W

o

A1 A2 G

C

TO-220

Storage Temperature

o

ELECTRICAL CHARACTERISTICS ( Ta = 25 C)

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Sustaining Voltage

Symbol

Test Conditions

V

CE

=100V, I

E

=0

V

CE

=100V, I

B

=0

V

EB

=5V, I

C

=0

I

C

=100mA, I

B

=0

V

CE

=3V, I

C

=3A

DC Current Gain

100

1000

750

100

20000

2.0

3.0

2.5

4.0

1.3

1.8

V

Min.

Typ.

Max.

0.1

1.0

2.0

Unit

mA

V

O

I

CBO

I

CEO

I

EBO

V

CEO

h

FE

V

CE

=3V, I

C

=5A

V

CE

=3V, I

C

=10A

Collector-Emitter Saturation Voltage

V

CE(sat)

V

BE(sat)

V

F

I

C

=5A, I

B

=20mA

I

C

=10A, I

B

=100mA

Base-Emitter Saturation Voltage

I

C

=5A, I

B

=20mA

I

C

=10A, I

B

=100mA

Parallel Diode Forward Voltage

I

F

=5A

I

F

=10A

BDW93C Related Products

	BDW93C	BDW94C
Description	12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB	POWER TRANSISTOR
state	DISCONTINUED	ACTIVE
Transistor type	GENERAL PURPOSE POWER	universal power supply

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