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BFU630F

Description
SILICON, VHF BAND, MIXER DIODE
CategoryDiscrete semiconductor    The transistor   
File Size10MB,130 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BFU630F Overview

SILICON, VHF BAND, MIXER DIODE

BFU630F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC, FLAT PACK-4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage5.5 V
ConfigurationSINGLE
highest frequency bandKU BAND
JESD-30 codeR-PDSO-F4
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)21000 MHz
RF Manual 16 edition
th
Application and design manual
for High Performance RF products
June 2012
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