BFU725F/N1
NPN wideband silicon germanium RF transistor
Rev. 2 — 3 November 2011
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A
or
equivalent standards.
1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 0.7 dB at 5.8 GHz
High maximum stable gain 27 dB at 1.8 GHz
110 GHz f
T
silicon germanium technology
1.3 Applications
2nd LNA stage and mixer stage in DBS LNB’s
Satellite radio
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ka band oscillators (DRO’s)
1.4 Quick reference data
Table 1.
V
CBO
V
CEO
V
EBO
I
C
P
tot
h
FE
Quick reference data
Conditions
open emitter
open base
open collector
T
sp
90
C
I
C
= 10 mA; V
CE
= 2 V;
T
j
= 25
C
[1]
Symbol Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
Min
-
-
-
-
-
160
Typ
-
-
-
25
-
280
Max
10
2.8
1.0
40
136
400
Unit
V
V
V
mA
mW
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
Quick reference data
…continued
Conditions
V
CB
= 2 V; f = 1 MHz
I
C
= 25 mA; V
CE
= 2 V;
f = 2 GHz; T
amb
= 25
C
I
C
= 25 mA; V
CE
= 2 V;
f = 5.8 GHz; T
amb
= 25
C
I
C
= 5 mA; V
CE
= 2 V;
f = 5.8 GHz;
S
=
opt
;
T
amb
= 25
C
[2]
Table 1.
C
CBS
f
T
G
p(max)
NF
Symbol Parameter
collector-base
capacitance
transition frequency
maximum power gain
noise figure
Min
-
-
-
-
Typ
70
55
18
0.7
Max
-
-
-
-
Unit
fF
GHz
dB
dB
[1]
[2]
T
sp
is the temperature at the solder point of the emitter lead.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
1, 3
2
1
mbb159
Simplified outline
3
4
Graphic symbol
4
2
3. Ordering information
Table 3.
Ordering information
Package
Name
BFU725F/N1
-
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
Type number
4. Marking
Table 4.
Marking
Marking
B7*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
Type number
BFU725F/N1
BFU725F_N1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 3 November 2011
2 of 12
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
open collector
T
sp
90
C
[1]
Min
-
-
-
-
-
65
-
Max
10
2.8
1.0
40
136
+150
150
Unit
V
V
V
mA
mW
C
C
T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
440
Unit
K/W
200
P
tot
(mW)
150
001aah424
100
50
0
0
40
80
120
T
sp
(°C)
160
Fig 1.
Power derating curve
BFU725F_N1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 3 November 2011
3 of 12
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)CBO
collector-base breakdown
voltage
V
(BR)CEO
collector-emitter breakdown
voltage
I
C
I
CBO
h
FE
C
CES
C
EBS
C
CBS
f
T
G
p(max)
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
I
E
= 0 mA; V
CB
= 4.5 V
I
C
= 10 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
C
I
C
= 25 mA; V
CE
= 2 V; T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
s
21
2
insertion power gain
I
C
= 25 mA; V
CE
= 2 V; T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
NF
noise figure
I
C
= 5 mA; V
CE
= 2 V;
S
=
opt
; T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
G
ass
associated gain
I
C
= 5 mA; V
CE
= 2 V;
S
=
opt
; T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
-
-
-
-
-
24
22
20
10
-
-
-
-
dB
dB
dB
dB
dB
-
-
-
-
-
0.42 -
0.43 -
0.47 -
0.7
1.1
-
-
dB
dB
dB
dB
dB
-
-
-
-
-
26.7 -
25.4 -
23
16
9.3
-
-
-
dB
dB
dB
dB
dB
[1]
Conditions
I
C
= 2.5
A;
I
E
= 0 mA
I
C
= 1 mA; I
B
= 0 mA
Min Typ Max Unit
10
2.8
-
-
-
-
-
-
-
-
-
-
-
-
-
25
-
268
400
70
55
28
27
18
13
-
-
40
400
-
-
-
-
-
-
-
-
fF
fF
fF
GHz
dB
dB
dB
dB
dB
V
V
mA
100 nA
160 280
25.5 -
13.5 -
BFU725F_N1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 3 November 2011
4 of 12
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
Table 7.
Characteristics
…continued
T
j
= 25
C unless otherwise specified.
Symbol Parameter
P
L(1dB)
output power at 1 dB gain
compression
Conditions
I
C
= 25 mA; V
CE
= 2 V; Z
S
= Z
L
= 50
;
T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
IP3
third-order intercept point
I
C
= 25 mA; V
CE
= 2 V; Z
S
= Z
L
= 50
;
T
amb
= 25
C;
f
2
= f
1
+ 1 MHz
f
1
= 1.5 GHz
f
1
= 1.8 GHz
f
1
= 2.4 GHz
f
1
= 5.8 GHz
[1]
G
p(max)
is the maximum power gain, if K
1. If K
1 then G
p(max)
= MSG.
Min Typ Max Unit
-
-
-
-
8.5
9
8.5
8
-
-
-
-
dBm
dBm
dBm
dBm
-
-
-
-
17
17
17
19
-
-
-
-
dBm
dBm
dBm
dBm
30
I
C
(mA)
20
001aak271
400
h
FE
350
001aak272
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
300
10
(9)
(10)
(11)
250
(1)
(2)
(3)
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
CE
(V)
200
0
10
20
I
C
(mA)
30
T
amb
= 25
C.
(1) I
B
= 110
A
(2) I
B
= 100
A
(3) I
B
= 90
A
(4) I
B
= 80
A
(5) I
B
= 70
A
(6) I
B
= 60
A
(7) I
B
= 50
A
(8) I
B
= 40
A
(9) I
B
= 30
A
(10) I
B
= 20
A
(11) I
B
= 10
A
T
amb
= 25
C.
(1) V
CE
= 1 V
(2) V
CE
= 1.5 V
(3) V
CE
= 2 V
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
Fig 3.
DC current gain a function of collector current;
typical values
BFU725F_N1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 3 November 2011
5 of 12
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