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BF1202

Description
RF Manual 16th edition
CategoryDiscrete semiconductor    The transistor   
File Size141KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BF1202 Overview

RF Manual 16th edition

BF1202 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage10 V
Maximum drain current (Abs) (ID)0.03 A
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.03 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components1
Number of terminals4
Operating modeDUAL GATE, ENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1202; BF1202R; BF1202WR
N-channel dual-gate PoLo
MOS-FETs
Product specification
Supersedes data of 2000 Mar 29
2010 Sep 16

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