BTB26 datasheet, PDF - EEWORLD Datasheet

BTB/BTA26

Discrete Triacs(Non-Isolated/Isolated)

Dimensions TO-220AB

Dim.

A

B

C

D

E

F

G

H

J

K

M

N

Q

R

Inches

Min.

Max.

0.500 0.550

0.580 0.630

0.390 0.420

0.139 0.161

0.230 0.270

0.100 0.125

0.045 0.065

0.110 0.230

0.025 0.040

0.100

BSC

0.170 0.190

0.045 0.055

0.014 0.022

0.090 0.110

Milimeter

Min.

Max.

12.70 13.97

14.73 16.00

9.91 10.66

3.54

4.08

5.85

6.85

2.54

3.18

1.15

1.65

2.79

5.84

0.64

1.01

2.54

BSC

4.32

4.82

1.14

1.39

0.35

0.56

2.29

2.79

G

T2

T1

T2

G

T1

ABSOLUTE MAXIMUM RATINGS

Symbol

I

T(RMS)

I

TSM

I

²

t

dI/dt

Parameter

RMS on-state current (full sine wave)

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25°C)

I

²

t Value for

fusing

Critical rate of rise of on-state current

_

I

G

= 2 x

I

GT

, tr < 100 ns

TO-220AB

F = 60 Hz

F = 50 Hz

Tc = 100°C

t = 16.7 ms

t = 20 ms

Value

25

260

250

340

Tj = 125°C

50

Unit

A

²

s

A/µs

tp = 10 ms

F = 120 Hz

V

DSM

/V

RSM

Non repetitive surge peak off-state

voltage

I

GM

P

G(AV)

T

stg

T

j

Peak gate current

Average gate p ower diss ipation

Storage junction temperature range

Operating junction temperature

range

tp = 10 ms

tp = 20 µs

Tj = 25°C

Tj = 125°C

V

DRM

/V

RRM

+ 100

V

A

W

°C

4

1

- 40 to + 150

- 40 to + 125

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

s

SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)

Symbol

Test Conditions

Quadrant

CW

I

GT

(1)

V

GT

V

GD

I

H

(2)

I

L

dV/dt (2)

V

D

= 12 V

V

D

= V

DRM

I

T

= 500 mA

I

G

= 1.2 I

GT

V

D

= 67 % V

DRM

gate open Tj = 125°C

Tj = 125°C

I - III

II

MIN.

(dI/dt)c (2) Without snubber

R

L

= 33

Ω

R

L

= 3.3 k

Ω

Tj = 125°C

I - II - III

MAX.

MIN.

MAX.

50

70

80

500

13

35

1.3

0.2

75

80

100

1000

22

V/µs

A/ms

BTA/BTB

BW

50

mA

V

mA

Unit

BTB/BTA26

Discrete Triacs(Non-Isolated/Isolated)

s

STANDARD (4 Quadrants)

Symbol

I

GT

(1)

V

D

= 12 V

V

GT

V

GD

I

H

(2)

I

L

V

D

= V

DRM

I

T

= 500 mA

I

G

= 1.2 I

GT

I - III - IV

II

R

L

= 3.3

Ω

Tj = 125°C

Test Conditions

R

L

= 33

Ω

Quadrant

I - II - III

IV

ALL

MAX.

MIN.

MAX.

MIN.

Value

50

100

1.3

0.2

80

70

160

500

10

V/µs

Unit

mA

V

mA

dV/dt (2) V

D

= 67 % V

DRM

gate open Tj = 125°C

(dV/dt)c (2) (dI/dt)c =13.3A/ms

Tj = 125°C

STATIC CHARACTERISTICS

Symbol

V

TM

(2)

V

to

(2)

R

d

(2)

I

DRM

I

RRM

Note 1:

minimum IGT is guaranted at 5% of IGT max.

Note 2:

for both polarities of A2 referenced to A1

Test Conditions

I

TM

= 35 A

tp = 380 µs

Tj = 25°C

Tj = 125°C

Tj = 25°C

Tj = 125°C

MAX.

Value

1.55

0.85

16

5

3

Unit

V

m

Ω

µ

A

mA

Threshold voltage

Dynamic resistance

V

DRM

= V

RRM

THERMAL RESISTANCES

Symbol

R

th(j-c)

R

th(j-a)

Junction to case (AC)

Junction to ambient

Parameter

Value

0.8

60

Unit

°C/W

PRODUCT SELECTOR

Voltage (xxx)

Part Number

200 V ~~ 1000 V

BTBV/BTA26

X

50 mA

Standard

TO-220AB

Sensitivity

Type

Package

OTHER INFORMATION

Part Number

BTB/BTA26

Marking

BTB/BTA26

Weight

2.3 g

Base

quantity

250

Packing

mode

Bulk

BTB/BTA26

Discrete Triacs(Non-Isolated/Isolated)

F ig. 1 Maximum power dis s ipation vers us R MS

:

on-s ta te current (full cycle).

30

25

20

15

10

5

0

5

IT (R MS ) (A )

10

15

20

25

P (W)

30

25

20

15

10

5

0

25

50

T c (°C )

75

100

125

B TA 24

F ig. 2

-1: R MS on-s tate current vers us cas e

temperature (full cycle).

IT (R MS ) (A )

B T B /T 25

B TA 25/26

F ig. 3 R ela tive variation of thermal impedance

:

vers us puls e duration.

F ig. 4

:

values ).

O n-s tate characteris tics (ma ximum

1E +0

K =[Zth/R th]

Zth(j-c)

300

100

IT M (A )

T j max

1E -1

Zth(j-a)

B TA/B T B 24/T 25

1E -2

10

Zth(j-a)

B TA26

T j=25°C

tp (s )

1E -3

1E -2

1E -1

1E +0

1E +1

1E +2 5E +2

V T M (V )

1

0.5

1.0

1.5

2.0

2.5

3.0

3.5

T j max.

V to = 0.85

V

R d = 16

Ω

m

4.0

4.5

F ig. 5 S urge peak on-s tate current versus

:

number of cycles.

IT S M (A )

300

250

200

150

100

50

0

t=20ms

Non repetitive

T j initial=25°C

One cycle

R epetitive

T c=75°C

Number of ycles

c

1

10

100

1000

BTB/BTA26

Discrete Triacs(Non-Isolated/Isolated)

F ig. 6 Non-repetitive s urge peak on-s tate

:

current for a s inus oida l puls e with width

tp < 10ms, a nd corres ponding value of I²t.

IT S M (A ),I² (A ² )

t

s

3000

T j initial=25°C

dI/dt limitation:

50A /µs

F ig. 7 R elative va riation of gate trigger current,

:

holding current and la tching current versus

junction temperature (typical va lues ).

IG T,IH,IL [T j] / IG,IH,IL [T j=25°C ]

T

2.5

2.0

IG T

1000

1.5

IT S M

1.0

0.5

IH & IL

tp (ms )

100

0.01

0.10

1.00

I²t

T j(°C )

10.00

0.0

-40

-20

0

20

40

60

80

100

120

140

F ig. 8 R elative varia tion of critical rate of

:

decreas e of main current vers us (dV /dt)c (typica l

values ).

(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c

2.4

2.2

2.0

1.8

1.6

B W/C W/T 2535

1.4

B

1.2

1.0

0.8

0.6

(dV /dt)c (V /µs )

0.4

0.1

1.0

10.0

F ig. 9 R elative variation of critical rate of

:

decreas e of main current vers us junction

temperature.

(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]

6

5

4

3

2

1

100.0

T j (°C )

0

25

50

75

100

125

0

BTB26

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