This is an N-channel enhancement mode silicon gate
power field effect transistor designed for applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power.
This type can be operated directly from integrated circuits
and housed in a TO-220 envelope.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
SD
I
DS
I
DM
V
GS
R
DS(on)
P
T
t
J
t
stg
t
L
Ratings
Drain-Source Voltage
Drain-Source diode Voltage
Continuous Drain Current T
C
= 37°C
Pulsed Drain Current T
C
= 25°C
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature T
C
= 25°C
Operating Temperature
Storage Temperature range
Lead Temperature 1.6 mm from case for 10 seconde
Value
200
<1.7
5.5
22
20
0.6
40
-55 to +150
-55 to +150
300
Unit
V
V
A
A
V
Ω
Watts
°C
01/10/2012
COMSET SEMICONDUCTORS
1/3
SEMICONDUCTORS
BUZ73A
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Thermal Resistance, chip case
Thermal Resistance, chip to ambient
Value
<3.1
<75
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
ISS
C
OSS
C
RSS
t
d(on)
t
r
t
d(off)
t
f
Ratings
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
Zero Gate Voltage Drain
Current
Gate-Source leakage Current
Drain-Source on Resistance
Transconductance
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
Test Condition(s)
I
D
=250 µA, V
GS
=0 V
I
D
=1 mA, V
GS
= V
DS
V
DS
=200 V, V
GS
=0 V
T
j
=25 °C
V
DS
=200 V, V
GS
=0 V
T
j
=125 °C
V
GS
=20 V, V
DS
=0 V
I
D
=4.5 A, V
GS
=10 V
V
DS
>2 * I
D
* R
DS(on)max
I
D
=4.5 A
V
GS
=0 V, V
DS
=25 V
f= 1MHz
V
DD
=30 V, V
GS
=10 V
I
D
=3 A
R
GS
= 50
Ω
Min
200
2.1
-
-
-
-
3
-
-
-
-
-
-
-
Typ
-
3
0.1
1
10
0.5
4.2
400
85
45
10
40
55
30
Max
-
4
1
Unit
V
V
µA
100
100
0.6
-
530
130
70
15
60
75
40
nA
Ω
S
pF
ns
01/10/2012
COMSET SEMICONDUCTORS
2/3
SEMICONDUCTORS
BUZ73A
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Pin 1 :
Pin 2 :
Pin 3 :
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
0,46
2,50
4,98
2.49
0,70
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Gate
Drain
Source
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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