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BUZ901

Description
POWER, FET
Categorysemiconductor    Discrete semiconductor   
File Size40KB,4 Pages
ManufacturerETC1
Download Datasheet Parametric Compare View All

BUZ901 Overview

POWER, FET

BUZ901 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeuniversal power supply
MAGNA
TEC
25.0
+0.1
-0.15
BUZ900
BUZ901
MECHANICAL DATA
Dimensions in mm
N–CHANNEL
POWER MOSFET
8.7 Max.
1.50
Typ.
11.60
± 0.3
10.90 ± 0.1
POWER MOSFETS FOR
AUDIO APPLICATIONS
30.2 ± 0.15
Ø 20 M ax.
39.0 ± 1.1
16.9 ± 0.15
1
2
Ø 1.0
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
R 4.0 ± 0.1
R 4.4 ± 0.2
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
Case – Source
• P–CHANNEL ALSO AVAILABLE AS
BUZ905 & BUZ906
TO–3
Pin 1 – Gate
Pin 2 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSX
Drain – Source Voltage
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θJC
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
BUZ900
160V
±14V
8A
8A
125W
–55 to 150°C
150°C
1°C/W
BUZ901
200V
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94

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