Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2525DF
DESCRIPTION
・With
TO-3PFa package
・High
voltage
・High
speed switching
・Built-in
damper diode
APPLICATIONS
・For
use in horizontal deflection circuits
of large screen colour TV receivers
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current -peak
Base Collector current (DC)
Base current -peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
7.5
12
30
8
12
45
150
-65~150
UNIT
V
V
A
A
A
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU2525DF
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA ;I
B
=0,L=25mH
800
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=600mA ;I
C
=0
7.5
13.5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=8A ;I
B
=1.6 A
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=8A ;I
B
=1.6 A
V
CE
=BV
CES;
V
BE
=0
T
j
=125℃
V
EB
=6V; I
C
=0
72
110
1.1
1.0
2.0
218
V
I
CES
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE-1
DC current gain
I
C
=1.0A ; V
CE
=5V
11
h
FE-2
DC current gain
I
C
=8A ; V
CE
=5V
5
7
9.5
V
F
Diode forward voltage
I
F
=8A
1.6
2.0
V
C
C
Collector capacitance
I
E
=0, f=1MHz;V
CB
=10V
145
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2525DF
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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