EEWORLDEEWORLDEEWORLD

Part Number

Search

BU2708DF

Description
Silicon NPN Power Transistors
File Size43KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

BU2708DF Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2708DF
DESCRIPTION
・With
TO-3PFa package
・High
voltage
・High
speed switching
・Built-in
damper diode
APPLICATIONS
・For
use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Collector current (DC)
Collector current -peak
Base Collector current (DC)
Base current -peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
CONDITIONS
VALUE
1700
825
8
15
4
6
45
150
-65~150
UNIT
V
V
A
A
A
A
W

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 816  1118  1513  2431  748  17  23  31  49  16 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号