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BU2720DF

Description
Silicon NPN Power Transistors
File Size43KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

BU2720DF Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2720DF
DESCRIPTION
・With
TO-3PFa package
・High
voltage
・High
speed switching
・Built-in
damper diode
APPLICATIONS
・For
use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Collector current (DC)
Collector current -peak
Base Collector current (DC)
Base current -peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
VALUE
1700
825
10
25
10
14
45
150
-65~150
UNIT
V
V
A
A
A
A
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