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BU2725DX

Description
isc Silicon NPN Power Transistor
File Size76KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

BU2725DX Overview

isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU2725DX
DESCRIPTION
·High
Switching Speed
·High
Voltage
·Built-in
Ddamper Ddiode
APPLICATIONS
·Designed
for use in horizontal deflection circuits of color
TV receivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CES
Collector- Emitter Voltage(V
BE
= 0)
1700
V
V
EBO
Emitter-Base Voltage
7.5
V
I
C
Collector Current- Continuous
12
A
I
CM
I
B
Collector Current-Peak
30
A
Base Current- Continuous
12
A
I
BM
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
20
A
P
C
45
W
T
J
150
T
stg
Storage Temperature Range
-65~150
SYMBOL
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.8
UNIT
℃/W
R
th j-c
isc Website:www.iscsemi.cn
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