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BYW98-200

Description
RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size236KB,4 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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BYW98-200 Overview

RECTIFIER DIODE

BYW98-200 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typerectifier diode
BYW98-200
High Efficiency Fast Recovery Rectifier Diodes
DO-201AD
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
trr (max)
FEATURES AND BENEFITS
VERY LOW CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIMES
Dimensions in inches and (millimeters)
3A
200 V
150 °C
0.85 V
35 ns
DESCRIPTION
Low voltage drop and rectifier suited for switching
mode base drive and transistor circuits.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
FRM
I
F (AV)
I
FSM
T
stg
Tj
T
L
Parameter
Repetitive peak reverse voltage
Repetitive peak forward current *
Average forward current*
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering during 10s at
4mm from case
tp=5
µs
F=1KHz
Ta = 75°C
δ
= 0.5
t
p
= 10ms
Sinusoidal
Value
200
110
3
70
- 65 to + 150
150
230
Unit
V
A
A
A
°C
°C
°C
* On infinite heatsink with 10mm lead length.
http://www.luguang.cn
mail:lge@luguang.cn
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