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BYX86

Description
2 A, 1000 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size126KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BYX86 Overview

2 A, 1000 V, SILICON, RECTIFIER DIODE

BYX86 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum output current2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time4 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BYX82, BYX83, BYX84, BYX85, BYX86
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
949539
• Halogen-free according to IEC 61249-2-21
definition
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
APPLICATIONS
• Rectification, general purpose
PARTS TABLE
PART
BYX82
BYX83
BYX84
BYX85
BYX86
TYPE DIFFERENTIATION
V
R
= 200 V; I
FAV
= 2 A
V
R
= 400 V; I
FAV
= 2 A
V
R
= 600 V; I
FAV
= 2 A
V
R
= 800 V; I
FAV
= 2 A
V
R
= 1000 V; I
FAV
= 2 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYX82
BYX83
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
BYX84
BYX85
BYX86
Peak forward surge current
Repetitive peak forward current
Average forward current
i
2
* t-rating
Junction and storage temperature
range
T
amb
45 °C
t
p
= 10 ms, half sine wave
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
FAV
i
2
* t
T
j
= T
stg
VALUE
200
400
600
800
1000
50
10
2
8
- 55 to + 175
UNIT
V
V
V
V
V
A
A
A
A
2
* s
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
Document Number: 86052
Rev. 1.6, 09-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

BYX86 Related Products

BYX86 BYX82_10 BYX84
Description 2 A, 1000 V, SILICON, RECTIFIER DIODE 2 A, 600 V, SILICON, RECTIFIER DIODE 2 A, 600 V, SILICON, RECTIFIER DIODE
Is it lead-free? Lead free - Lead free
package instruction O-LALF-W2 - O-LALF-W2
Contacts 2 - 2
Reach Compliance Code unknow - unknow
ECCN code EAR99 - EAR99
application GENERAL PURPOSE - GENERAL PURPOSE
Shell connection ISOLATED - ISOLATED
Configuration SINGLE - SINGLE
Diode component materials SILICON - SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE
JESD-30 code O-LALF-W2 - O-LALF-W2
Maximum non-repetitive peak forward current 50 A - 50 A
Number of components 1 - 1
Phase 1 - 1
Number of terminals 2 - 2
Maximum output current 2 A - 2 A
Package body material GLASS - GLASS
Package shape ROUND - ROUND
Package form LONG FORM - LONG FORM
Certification status Not Qualified - Not Qualified
Maximum repetitive peak reverse voltage 1000 V - 600 V
Maximum reverse recovery time 4 µs - 4 µs
surface mount NO - NO
Terminal form WIRE - WIRE
Terminal location AXIAL - AXIAL
Base Number Matches 1 - 1
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