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BZW03C39

Description
1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size67KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

BZW03C39 Overview

1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

BZW03C...
Vishay Telefunken
Silicon Z–Diodes and Transient Voltage Suppressors
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Clamping time in picoseconds
Applications
94 9588
Voltage regulators and transient suppression circuits
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Repetitive peak reverse power dissipation
Non repetitive peak surge power dissipation
Junction temperature
Storage temperature range
Test Conditions
l=10mm, T
L
=25
°
C
T
amb
=45
°
C
t
p
=100
m
s, T
j
=25
°
C
Type
Symbol
P
V
P
V
P
ZRM
P
ZSM
T
j
T
stg
Value
6.0
1.85
20
1000
175
–65...+175
Unit
W
W
W
W
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Junction ambient l=25mm, T
L
=constant
on PC board with spacing 37.5mm
Symbol
R
thJA
R
thJA
Value
30
70
Unit
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=1A
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
Document Number 85602
Rev. 2, 01-Apr-99
www.vishay.de
FaxBack +1-408-970-5600
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