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BZW03D22

Description
1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size97KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BZW03D22 Overview

1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

BZW03-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
949588
Applications
• Voltage regulators and transient suppression
circuits
Mechanical Data
Case:
SOD-64
Weight:
approx. 858 mg
Packaging codes/options:
TAP / 2.5 k Ammopack (52 mm tape), 12.5 k/box
TR / 2.5 k 10 " reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction temperature
Storage temperature range
t
p
= 100
μs,
T
j
= 25 °C
Test condition
l = 10 mm, T
L
= 25 °C
T
amb
= 45 °C
Symbol
P
diss
P
diss
P
ZRM
P
ZSM
T
j
T
stg
Value
6
1.85
20
1000
175
- 65 to + 175
Unit
W
W
W
W
°C
°C
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 25 mm, T
L
= constant
On PC board with spacing 37.5 mm
Symbol
R
thJA
R
thJA
Value
30
70
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 1 A
Symbol
V
F
Min.
Typ.
Max.
1.2
Unit
V
Document Number 85602
Rev. 1.5, 26-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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