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U1GWJ2C49

Description
1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size149KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

U1GWJ2C49 Overview

1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE

U1GWJ2C49 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionR-PSSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-PSSO-F3
Maximum non-repetitive peak forward current15 A
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
U1GWJ2C49
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
U1GWJ2C49
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
l
Average Output Rectified Current
l
Repetitive Peak Reverse Voltage
: I
O
= 1A
: V
RRM
= 40V
Unit: mm
l
Low Switching Losses and Output Noise.
POLARITY
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
I
O
I
FSM
T
j
T
stg
RATING
40
1
15 (50Hz)
16.5 (60Hz)
−40~125
−40~150
UNIT
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.05g
12−5B1A
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
(Note 1)
SYMBOL
V
FM
I
RRM
C
j
R
th (j−a)
TEST CONDITION
IFM = 0.5A
VRRM = 40V
VR = 10V, f = 1MHz
DC
(250mm *0.8mm Ceramic)
TYP.
25
MAX
0.55
0.5
125
UNIT
V
mA
pF
°C / W
Repetitive Peak Reverse Current
(Note 1)
Junction Capacitance
Thermal Resistance
(Junction to Ambient)
(Note 1)
Note 1: A value of one cell.
MARKING
1
2001-07-11

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