Page Mode DRAM, 64KX4, 200ns, CMOS, CDIP18, 0.300 INCH, CERAMIC, DIP-18
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | 0.300 INCH, CERAMIC, DIP-18 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| access mode | PAGE |
| Maximum access time | 200 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O type | COMMON |
| JESD-30 code | R-CDIP-T18 |
| JESD-609 code | e0 |
| memory density | 262144 bit |
| Memory IC Type | PAGE MODE DRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 18 |
| word count | 65536 words |
| character code | 64000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 64KX4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP18,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| power supply | 5 V |
| Certification status | Not Qualified |
| refresh cycle | 256 |
| Filter level | MIL-STD-883 Class B |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| MT4067C-20 | MT4067EJ-8 | MT4067EC-15XT | MT4067EC-12XT | MT4067EC-12/883C | MT4067EC-10XT | MT4067EC-15/883C | MT4067EC-10/883C | MT4067C-20/883C | |
|---|---|---|---|---|---|---|---|---|---|
| Description | Page Mode DRAM, 64KX4, 200ns, CMOS, CDIP18, 0.300 INCH, CERAMIC, DIP-18 | Page Mode DRAM, 64KX4, 80ns, MOS, PQCC18 | Page Mode DRAM, 64KX4, 150ns, CMOS, CQCC18, CERAMIC, LCC-18 | Page Mode DRAM, 64KX4, 120ns, CMOS, CQCC18, CERAMIC, LCC-18 | Page Mode DRAM, 64KX4, 120ns, CMOS, CQCC18, CERAMIC, LCC-18 | Page Mode DRAM, 64KX4, 100ns, CMOS, CQCC18, CERAMIC, LCC-18 | Page Mode DRAM, 64KX4, 150ns, CMOS, CQCC18, CERAMIC, LCC-18 | Page Mode DRAM, 64KX4, 100ns, CMOS, CQCC18, CERAMIC, LCC-18 | Page Mode DRAM, 64KX4, 200ns, CMOS, CDIP18, 0.300 INCH, CERAMIC, DIP-18 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | _compli |
| Maximum access time | 200 ns | 80 ns | 150 ns | 120 ns | 120 ns | 100 ns | 150 ns | 100 ns | 200 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-CDIP-T18 | R-PQCC-J18 | X-CQCC-N18 | X-CQCC-N18 | X-CQCC-N18 | X-CQCC-N18 | X-CQCC-N18 | X-CQCC-N18 | R-CDIP-T18 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bi |
| Memory IC Type | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM |
| memory width | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| Number of terminals | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
| word count | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| character code | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| Maximum operating temperature | 70 °C | 70 °C | 125 °C | 125 °C | 110 °C | 125 °C | 110 °C | 110 °C | 110 °C |
| Minimum operating temperature | - | - | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| organize | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP | QCCJ | QCCN | QCCN | QCCN | QCCN | QCCN | QCCN | DIP |
| Encapsulate equivalent code | DIP18,.3 | LDCC18,.33X.53 | LCC18,.3X.5 | LCC18,.3X.5 | LCC18,.3X.5 | LCC18,.3X.5 | LCC18,.3X.5 | LCC18,.3X.5 | DIP18,.3 |
| Package shape | RECTANGULAR | RECTANGULAR | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | RECTANGULAR |
| Package form | IN-LINE | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 256 | 256 | 256 | 256 | 256 | 256 | 256 | 256 | 256 |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | YES | YES | YES | YES | YES | YES | YES | NO |
| technology | CMOS | MOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | MILITARY | MILITARY | OTHER | MILITARY | OTHER | OTHER | OTHER |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | J BEND | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm |
| Terminal location | DUAL | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | DUAL |
| package instruction | 0.300 INCH, CERAMIC, DIP-18 | - | CERAMIC, LCC-18 | CERAMIC, LCC-18 | CERAMIC, LCC-18 | CERAMIC, LCC-18 | CERAMIC, LCC-18 | CERAMIC, LCC-18 | 0.300 INCH, CERAMIC, DIP-18 |
| ECCN code | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | PAGE | - | PAGE | PAGE | PAGE | PAGE | PAGE | PAGE | PAGE |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | - | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| Number of functions | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of ports | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Operating mode | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Filter level | MIL-STD-883 Class B | - | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B |
| Maximum supply voltage (Vsup) | 5.5 V | - | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | - | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Maker | - | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
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