White Electronic Designs
128K
X
32 SRAM/FLASH MODULE
FEATURES
Access Times of 25ns (SRAM) and 70, 90 and
120ns (FLASH)
Packaging:
• 66-pin, PGA Type, 1.385 inch square HIP,
Hermetic Ceramic HIP (Package 402)
128Kx32 SRAM
128Kx32 5V Flash
Organized as 128Kx32 of SRAM and 128Kx32 of
Flash Memory with common Data Bus
Low Power CMOS
Commercial, Industrial and Military Temperature
Ranges
TTL Compatible Inputs and Outputs
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight - 13 grams typical
WSF128K32-XH2X
PRELIMINARY*
FLASH MEMORY FEATURES
10,000 Erase/Program Cycles
Sector Architecture
• 8 equal size sectors of 16K bytes each
• Any combination of sectors can be concurrently
erased. Also supports full chip erase
5 Volt Programming; 5V ± 10% Supply
Embedded Erase and Program Algorithms
Hardware Write Protection
Page Program Operation and Internal Program
Control Time.
* This product is under development, not fully characterized, and is subject to change
without notice.
Note: Programming information available upon request.
FIGURE 1 – PIN CONFIGURATION FOR WSF128K32-XH2X
Top View
1
I/O
8
I/O
9
I/O
10
A
14
A
16
A
11
A
0
NC
I/O
0
I/O
1
I/O
2
11
22
12
FWE
2
#
SWE
2
#
GND
I/O
11
A
10
A
9
A
15
V
CC
FCS#
SCS#
I/O
3
33
23
I/O
15
I/O
14
I/O
13
I/O
12
OE#
NC
FWE
1
#
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
7
A
12
SWE
1
#
A
13
A
8
I/O
16
I/O
17
I/O
18
44
34
V
CC
SWE
4
#
FWE
4
#
I/O
27
A
4
A
5
A
6
FWE
3
#
SWE
3
#
GND
I/O
19
55
45
I/O
31
I/O
30
I/O
29
I/O
28
A
1
A
2
A
3
I/O
23
I/O
22
I/O
21
I/O
20
66
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
FWE
1
#
OE#
A
0-16
SCS#
FCS#
128K x 8 Flash
128K x 8 SRAM
128K x 8 Flash
128K x 8 SRAM
128K x 8 Flash
128K x 8 SRAM
128K x 8 Flash
128K x 8 SRAM
SWE
1
#
Pin Description
56
D0-31
A0-16
SWE1-4#
SCS#
OE#
V
CC
GND
NC
FWE1-4#
FCS#
Data Inputs/Outputs
Address Inputs
SRAM Write Enable
SRAM Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Flash Write Enable
Flash Chip Select
Block Diagram
FWE
2
#
SWE
2
#
FWE
3
#
SWE
3
#
FWE
4
#
SWE
4
#
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
October 2004
Rev. 4
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
-0.5
Max
+125
+150
7.0
150
7.0
Unit
°C
°C
V
°C
V
SCS#
H
L
L
L
OE#
X
L
H
X
WSF128K32-XH2X
PRELIMINARY
SRAM TRUTH TABLE
SWE#
X
H
H
L
Mode
Standby
Read
Read
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
NOTE:
1. FCS# must remain high when SCS# is low.
Parameter
Flash Data Retention
Flash Endurance (write/erase cycles)
10 years
10,000
Parameter
OE# capacitance
F/S WE
1-4
# capacitance
F/S CS# capacitance
D
0-31
capacitance
A
0-16
capacitance
CAPACITANCE
Ta = +25°C
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Conditions
Max Unit
V
IN
= 0 V, f = 1.0 MHz 80 pF
V
IN
= 0 V, f = 1.0 MHz 30 pF
V
IN
= 0 V, f = 1.0 MHz 50 pF
V
IN
= 0 V, f = 1.0 MHz 30 pF
V
IN
= 0 V, f = 1.0 MHz 80 pF
NOTE:
1. Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and
affect reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min
4.5
2.2
-0.5
Max
5.5
V
CC
+ 0.3
+0.8
Unit
V
V
V
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Input Leakage Current
Output Leakage Current
SRAM Operating Supply Current x 32 Mode
Standby Current
SRAM Output Low Voltage
SRAM Output High Voltage
Flash V
CC
Active Current for Read (1)
Flash V
CC
Active Current for Program or
Erase (2)
Flash Output Low Voltage
Flash Output High Voltage
Flash Output High Voltage
Flash Low V
CC
Lock Out Voltage
Symbol
I
LI
I
LO
I
CCx32
I
SB
V
OL
V
OH
I
CC1
I
CC2
V
OL
V
OH1
V
OH2
V
LKO
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
SCS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
SCS# = V
IL
, OE# = FCS# = V
IH
, f = 5MHz, V
CC
= 5.5
FCS# = SCS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
I
OL
= 8mA, V
CC
= 4.5
I
OH
= -4.0mA, V
CC
= 4.5
FCS# = V
IL
, OE# = SCS# = V
IH
FCS# = V
IL
, OE# = SCS# = V
IH
I
OL
= 8.0mA, V
CC
= 4.5
I
OH
= -2.5 mA, V
CC
= 4.5
I
OH
= -100
μA,
V
CC
= 4.5
Min
Max
10
10
670
80
0.4
220
280
0.45
0.85 x V
CC
V
CC
-0.4
3.2
Unit
μA
μA
mA
mA
V
V
mA
mA
V
V
V
V
2.4
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
October 2004
Rev. 4
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
SRAM AC CHARACTERISTICS
V
CC
= 5.0V, -55°C
≤
T
A
≤
+125°C
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
Symbol
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
1
t
OHZ
1
Min
25
25
0
25
15
3
0
12
12
-25
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Parameter
Write Cycle
WSF128K32-XH2X
PRELIMINARY
SRAM AC CHARACTERISTICS
V
CC
= 5.0V, -55°C
≤
T
A
≤
+125°C
Symbol
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
1
t
DH
Min
25
20
20
15
20
3
0
3
15
0
-25
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1. This parameter is guaranteed by design but not tested.
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold from Write Time
1. This parameter is guaranteed by design but not tested.
FIGURE 2 – AC TEST CIRCUIT
AC Test Conditions
I
OL
Current Source
D.U.T.
C
eff
= 50 pf
V
Z
≈ 1.5V
(Bipolar Supply)
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
I
OH
Current Source
Notes:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
October 2004
Rev. 4
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
WSF128K32-XH2X
PRELIMINARY
FIGURE 3 – SRAM TIMING WAVEFORM - READ CYCLE
t
RC
ADDRESS
t
AA
t
RC
ADDRESS
SCS#
t
ACS
t
AA
t
OH
SOE#
t
CHZ
t
CLZ
t
OE
t
OLZ
DATA I/O
HIGH IMPEDANCE
DATA I/O
PREVIOUS DATA VALID
DATA VALID
t
OHZ
DATA VALID
READ CYCLE 1, (SCS# = OE# = V
IL
, SWE# = FCS# = V
IH
)
READ CYCLE 2, (SWE# = FCS# = V
IH
)
FIGURE 4 – SRAM WRITE CYCLE - SWE# CONTROLLED
t
WC
ADDRESS
t
AW
t
CW
SCS#
t
AH
t
AS
SWE#
t
WP
t
OW
t
WHZ
t
DW
DATA VALID
t
DH
DATA I/O
WRITE CYCLE 1, SWE# CONTROLLED (FCS# = V
IH
)
FIGURE 5 – SRAM WRITE CYCLE - SCS# CONTROLLED
t
WC
ADDRESS
t
AS
SCS#
t
AW
t
CW
t
AH
t
WP
SWE#
t
DW
DATA I/O
DATA VALID
t
DH
WRITE CYCLE 2, SCS# CONTROLLED (FCS# = V
IH
)
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
October 2004
Rev. 4
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
V
CC
= 5.0V, -55°C
≤
T
A
≤
+125°C
Parameter
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Hold Time
Write Enable Pulse Width High
Duration of Byte Programming Operation (min)
Chip and Sector Erase Time
Read Recovery Time Before Write
V
CC
Set-up Time
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (1)
1. For Toggle and Data# Polling.
t
OES
t
OEH
0
10
t
AVAV
t
ELWL
t
WLWH
t
AVWL
t
DVWH
t
WHDX
t
WLAX
t
WHEH
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
VCS
Symbol
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
CH
t
WPH
Min
70
0
45
0
45
0
45
0
20
14
2.2
0
50
12.5
0
10
60
-70
Max
Min
90
0
45
0
45
0
45
0
20
14
2.2
0
50
-90
WSF128K32-XH2X
PRELIMINARY
FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FWE# CONTROLLED
Max
Min
120
0
50
0
50
0
50
0
20
14
60
2.2
0
50
12.5
0
10
12.5
60
-120
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
μs
μs
sec
ns
ns
FLASH AC CHARACTERISTICS – READ ONLY OPERATIONS
V
CC
= 5.0V, -55°C
≤
T
A
≤
+125°C
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
OE# to Output Valid
Chip Select to Output High Z (1)
OE# High to Output High Z (1)
Output Hold from Address, FCS# or OE# Change,
whichever is
fi
rst
1. Guaranteed by design, not tested.
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
Symbol
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
0
Min
70
70
70
35
20
20
0
-70
Max
Min
90
90
90
40
25
25
0
-90
Max
Min
120
120
120
50
30
30
-120
Max
Unit
ns
ns
ns
ns
ns
ns
ns
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
October 2004
Rev. 4
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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